Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications


A new technical paper titled "On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices" was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab. "Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstr... » read more

Flexible IGZO RISC-V Microprocessor


A new technical paper titled "Bendable non-silicon RISC-V microprocessor" was published by researchers at Pragmatic Semiconductor, Qamcom,  and Harvard University. From the abstract: "Here we present Flex-RV, a 32-bit microprocessor based on an open RISC-V instruction set fabricated with indium gallium zinc oxide thin-film transistors on a flexible polyimide substrate, enabling an ultralow... » read more

Dualtronics: Photonic Devices on the Cation Face and Electronic Devices on the Anion Face of the Same Wafer


A new technical paper titled "Using both faces of polar semiconductor wafers for functional devices" was published by researchers at Cornell University and Polish Academy of Sciences. Find the technical paper here. Published September 2024. Cornell University's news release is here, stating "Cornell researchers, in collaboration with a team at the Polish Academy of Sciences, have develope... » read more

Method To Determine The Permittivity of Dielectric Materials in 3D Integrated Structures At Broadband RF Frequencies


A new technical paper titled "Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz" was published by researchers at NIST. Abstract "We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave ele... » read more

Improving The Air-Stability and NBTI Reliability of BEOL CNFETs


A new technical paper titled "Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors" was published by researchers at MIT, Stanford University, Carnegie Mellon University and Analog Devices. Abstract: "Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among ... » read more

Scalable Fabrication of Graphene FETs on Non-Planar Surfaces (Imperial College London)


A new technical paper titled "Fabrication of graphene field effect transistors on complex non-planar surfaces" was published by researchers at Imperial College London. Abstract "Graphene field effect transistors (GFETs) are promising devices for biochemical sensing. Integrating GFETs onto complex non-planar surfaces could uncap their potential in emerging areas of wearable electronics, such... » read more

Relative Humidity in Conductive Atomic Force Microscopy (KAUST)


A new technical paper titled "The Effect of Relative Humidity in Conductive Atomic Force Microscopy" was published by researchers at KAUST. Abstract "Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field o... » read more

Block Copolymer and Sub-10nm Line Patterns By Directed Self-Assembly (Tokyo Tech)


A technical paper titled "Chemically tailored block copolymers for highly reliable sub-10-nm patterns by directed self-assembly" was published by researchers at Tokyo Institute of Technology and Tokyo Ohka Kogyo Co. Abstract "While block copolymer (BCP) lithography is theoretically capable of printing features smaller than 10 nm, developing practical BCPs for this purpose remains challeng... » read more

Flip-Chip Bonding Technique To Excite LN Resonators Via Noncontact Electrodes (Yale)


A new technical paper titled "Noncontact excitation of multi-GHz lithium niobate electromechanical resonators" was published by researchers at Yale University. Abstract "The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being ... » read more

Fano Resonance in a Si PIC Using a Piezoelectrically Driven Mechanism (Ghent, imec)


A new technical paper titled "Piezoelectrically driven Fano resonance in silicon photonics" was published by researchers at Ghent University and imec. Abstract "Piezoelectric optomechanical platforms provide a promising avenue for efficient signal transduction between microwave and optical domains. Lead zirconate titanate (PZT) thin film stands out as a compelling choice for building such... » read more

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