category: Materials

category: IoT, Security & Automotive

Design Space For The Device-Circuit Codesign Of NVM-Based CIM Accelerators (TSMC)
By Technical Paper Link - 24 Feb, 2025 - Comments: 0

A new technical paper titled "Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators" was published by TSMC researchers. Abstract "Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devices. Nonvolatile memory (NVM) devices offer one s... » read more

Material Properties of Si/SiGe Multi-layer Stacks For CFETs (Imec, Ghent U, et al.)
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A new technical paper titled "Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices" was published by researchers at Imec and Ghent University, et al. Abstract "After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material pr... » read more

CFETs with Optimized Buried Power Rails
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A technical paper titled "Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)" was published by researchers at Korea University and Sungkyunkwan University. Abstract "In the pursuit of minimizing the track height in standard cell, a design innovation incorporating complementary field-effect transistors (CFETs) and Buried Power Rail (BPR) technolog... » read more

Low-Temperature Solid-Liquid Interdiffusion Bonding For High-Density Interconnect Applications
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A new technical paper titled "Facilitating Small-Pitch Interconnects with Low-Temperature Solid-Liquid Interdiffusion Bonding" was published by researchers at Aalto University in Finland. Abstract "The trend for 3D heterogeneous integration drives the need for a low-temperature bonding process for high-density interconnects (HDI). The Cu-Sn-In based solid-liquid interdiffusion (SLID) is a p... » read more

Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)
By Technical Paper Link - 14 Feb, 2025 - Comments: 0

A new technical paper titled "First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET" was published by researchers at Georgia Institute of Technology and Micron. Abstract "We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide ... » read more

Simulation Study Of Vertically Stacked 2D NSFETs
By Technical Paper Link - 12 Feb, 2025 - Comments: 0

A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

High-Temperature Nonreciprocal Thermal Radiative Properties From Semiconductors (U. Houston, Caltech, UW-Madison)
By Technical Paper Link - 12 Feb, 2025 - Comments: 0

A new technical paper titled "High-Temperature Strong Nonreciprocal Thermal Radiation from Semiconductors" was published by University of Houston, California Institute of Technology and University of Wisconsin-Madison. Abstract "Nonreciprocal thermal emitters that break the conventional Kirchhoff's law allow independent control of emissivity and absorptivity and promise exciting new funct... » read more

Optimization of Oxygen Plasma Conditions for Cu-Cu Bonding
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Understanding and Optimizing Oxygen Plasma Treatment for Enhanced Cu-Cu Bonding Application" was published by researchers at Seoul National University of Science and Technology. Abstract "This study investigates the optimization of O2 plasma treatment conditions to enhance Cu-Cu bonding. The O2 plasma treatment conditions were optimized using Design of Experime... » read more

Indium Tungsten Oxide (IWO) Thin-Film Transistors
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors" was published by researchers at Rochester Institute of Technology and Corning Research and Development Corporation. Abstract "Indium tungsten oxide (IWO) has been investigated as an oxide semiconductor candidate for next-generation thin-film transistors (TFTs). Bottom-gate TFTs we... » read more

Indium Nitrate As An Advanced Metal-Oxide Resist for EUV Lithography
By Technical Paper Link - 03 Feb, 2025 - Comments: 0

A new technical paper titled "Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure" was published by researchers at UT Dallas. "We evaluate the sensitivity and contrast of indium nitrate resists by analyzing dose curves collected using electron beam lithography (EBL) and extreme ultraviolet (EUV) exposure, " states t... » read more

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