Guidelines For A Single-Nanometer Magnetic Tunnel Junction (MTJ)


A technical paper titled “Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities” was published by researchers at Tohoku University, Université de Lorraine, and Inamori Research Institute for Science. Abstract: "Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-... » read more

Hacking DNA To Make 3D Nanostructures


A technical paper titled “Three-dimensional nanoscale metal, metal oxide, and semiconductor frameworks through DNA-programmable assembly and templating” was published by researchers at Brookhaven National Laboratory, Columbia University, and Stony Brook University. Abstract: "Controlling the three-dimensional (3D) nanoarchitecture of inorganic materials is imperative for enabling their no... » read more

A New Phase-Change Memory For Processing Large Amounts Of Data 


A technical paper titled “Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory” was published by researchers at Stanford University, TSMC, NIST, University of Maryland, Theiss Research and Tianjin University. Abstract: "Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on... » read more

Heterogeneous Integration of Graphene and Hafnium Oxide Memristors Using Pulsed-Laser Deposition


A technical paper titled “Heterogeneous Integration of Graphene and HfO2 Memristors” was published by researchers at Forschungszentrum Jülich, Jožef Stefan Institute, and Jülich-Aachen Research Alliance (JARA-FIT). Abstract: "The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electro... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors


A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Ferroelectric Tunnel Junctions In Crossbar Array Analog In-Memory Compute Accelerators


A technical paper titled “Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators” was published by researchers at Lund University. Abstract: "Neuromorphic computing has seen great interest as leaps in artificial intelligence (AI) applications have exposed limitations due to heavy memory access, with the von Neumann computing architecture. The parallel in-memory comp... » read more

Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors


A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

Demonstrating A 2D–0D Hybrid Optical Multi-Level Memory Device Operated By Laser Pulses


A technical paper titled “Probing Optical Multi-Level Memory Effects in Single Core–Shell Quantum Dots and Application Through 2D-0D Hybrid Inverters” was published by researchers at Korea Institute of Science and Technology (KIST), Korea University, Daegu Gyeongbuk Institute of Science and Technology (DGIST), National Institute for Materials Science (Japan), and University of Science and... » read more

Large-Scale Integration Of 2D Materials As The Semiconducting Channel In An In-Memory Processor (EPFL)


A technical paper titled “A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories” was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL). Abstract: "Data-driven algorithms—such as signal processing and artificial neural networks—are required to process and extract meaningful information from the mass... » read more

Superconducting Material With Exceptional Tunability


A technical paper titled “Strain-switchable field-induced superconductivity” was published by researchers at Massachusetts Institute of Technology (MIT), University of Washington, Argonne National Laboratory, Cornell University, Zhejiang University of Science and Technology, and George Mason University. Abstract: "Field-induced superconductivity is a rare phenomenon where an applied magne... » read more

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