Large-Scale Integration Of 2D Materials As The Semiconducting Channel In An In-Memory Processor (EPFL)

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A technical paper titled “A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories” was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL).

Abstract:

“Data-driven algorithms—such as signal processing and artificial neural networks—are required to process and extract meaningful information from the massive amounts of data currently being produced in the world. This processing is, however, limited by the traditional von Neumann architecture with its physical separation of processing and memory, which motivates the development of in-memory computing. Here we report an integrated 32 × 32 vector-matrix multiplier with 1,024 floating-gate field-effect transistors that use monolayer molybdenum disulfide as the channel material. In our wafer-scale fabrication process, we achieve a high yield and low device-to-device variability, which are prerequisites for practical applications. A statistical analysis highlights the potential for multilevel and analogue storage with a single programming pulse, allowing our accelerator to be programmed using an efficient open-loop programming scheme. We also demonstrate reliable, discrete signal processing in a parallel manner.”

Find the technical paper here. Published November 2023.

Migliato Marega, G., Ji, H.G., Wang, Z. et al. A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories. Nat Electron 6, 991–998 (2023). https://doi.org/10.1038/s41928-023-01064-1

Further Reading
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