category: Memory

category: IoT, Security & Automotive

Survey of CXL Implementations and Standards (Intel, Microsoft)
By Technical Paper Link - 22 Jul, 2024 - Comments: 0

A new technical paper titled "An Introduction to the Compute Express Link (CXL) Interconnect" was published by researchers at Intel Corporation, Microsoft, and University of Washington. Abstract "The Compute Express Link (CXL) is an open industry-standard interconnect between processors and devices such as accelerators, memory buffers, smart network interfaces, persistent memory, and solid-... » read more

Analysis Of The On-DRAM-Die Read Disturbance Mitigation Method: Per Row Activation Counting
By Technical Paper Link - 10 Jul, 2024 - Comments: 0

A technical paper titled “Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance” was published by researchers at ETH Zürich and TOBB University of Economics and Technology. Abstract: "We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per... » read more

Lower Energy, High Performance LLM on FPGA Without Matrix Multiplication
By Technical Paper Link - 27 Jun, 2024 - Comments: 0

A new technical paper titled "Scalable MatMul-free Language Modeling" was published by UC Santa Cruz, Soochow University, UC Davis, and LuxiTech. Abstract "Matrix multiplication (MatMul) typically dominates the overall computational cost of large language models (LLMs). This cost only grows as LLMs scale to larger embedding dimensions and context lengths. In this work, we show that MatMul... » read more

A Memory Device With MoS2 Channel For High-Density 3D NAND Flash-Based In-Memory Computing
By Technical Paper Link - 26 Jun, 2024 - Comments: 0

A technical paper titled “Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing" was published by researchers at Kyungpook National University, Sungkyunkwan University, Dankook University, and Kwangwoon University. Abstract: "With the rise of on-device artificial intelligence (AI) technology, the demand for in-memory computing has surged for data-intensiv... » read more

NeuroHammer Attacks on ReRAM-Based Memories
By Technical Paper Link - 21 Jun, 2024 - Comments: 0

A new technical paper titled "NVM-Flip: Non-Volatile-Memory BitFlips on the System Level" was published by researchers at Ruhr-University Bochum, University of Duisburg-Essen, and Robert Bosch. Abstract "Emerging non-volatile memories (NVMs) are promising candidates to substitute conventional memories due to their low access latency, high integration density, and non-volatility. These super... » read more

Rowhammer Bit Flips On A High-End RISC-V CPU (ETH Zurich)
By Technical Paper Link - 13 Jun, 2024 - Comments: 0

A new technical paper titled "RISC-H: Rowhammer Attacks on RISC-V" was published by researchers at ETH Zurich.  RISC-H will be presented at DRAMSec (co-located with ISCA 2024) Abstract: "The first high-end RISC-V CPU with DDR4 support has been released just a few months ago. There are currently no Rowhammer studies on RISC-V devices and it is unclear whether it is possible to compromise ... » read more

Memory System Benchmarking, Simulation, And Application Profiling Via A Memory Stress Framework
By Technical Paper Link - 22 May, 2024 - Comments: 0

A technical paper titled “A Mess of Memory System Benchmarking, Simulation and Application Profiling” was published by researchers at Barcelona Supercomputing Center, Unversitat Politecnica de Catalunya, and Micron Technology (Italy). Abstract: "The Memory stress (Mess) framework provides a unified view of the memory system benchmarking, simulation and application profiling. The Mess benc... » read more

Ferroelectric Memory-Based IMC for ML Workloads
By Technical Paper Link - 21 May, 2024 - Comments: 0

A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

DRAM Microarchitectures And Their Impacts On Activate-Induced Bitflips Such As RowHammer 
By Technical Paper Link - 19 May, 2024 - Comments: 0

A technical paper titled “DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enh... » read more

A Design And Benchmarking Study Of CAM At 7nm In The Context Of Similarity Search Applications (Georgia Tech)
By Technical Paper Link - 07 May, 2024 - Comments: 0

A technical paper titled “Cross-layer Modeling and Design of Content Addressable Memories in Advanced Technology Nodes for Similarity Search” was published by researchers at the Georgia Institute of Technology. Abstract: "In this paper we present a comprehensive design and benchmarking study of Content Addressable Memory (CAM) at the 7nm technology node in the context of similarity search... » read more

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