category: Memory

category: IoT, Security & Automotive

Stacked Ferroelectric Memory Array Comprised Of Laterally Gated Ferroelectric Field-Effect Transistors
By Technical Paper Link - 10 Nov, 2023 - Comments: 0

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3  for stacked in-memory computing array” was published by researchers at Samsung Electronics and Sungkyunkwan University. Abstract: "In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfe... » read more

A Novel Approach To Mitigating RowHammer Attacks And Improving Server Memory System Reliability
By Technical Paper Link - 07 Nov, 2023 - Comments: 0

A technical paper titled “RAMPART: RowHammer Mitigation and Repair for Server Memory Systems” was published by researchers at Rambus. Abstract: "RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process technology... » read more

CMOS-Based HW Topology For Single-Cycle In-Memory XOR/XNOR Operations
By Technical Paper Link - 07 Nov, 2023 - Comments: 0

A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). Abstract: "Big data applications are on the rise, and so is the number of data centers. The ever-increasing massive data pool needs to be periodically backed up in a secure environment. Moreover, a ... » read more

Modulated Electron Microscopy Applied In The Process Monitoring Of Memory Cell And The Defect Inspection Of Floating Circuits
By Technical Paper Link - 07 Nov, 2023 - Comments: 0

A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA Corporation, and Western Digital. Abstract: "E-beam inspection based on voltage-contrast (VC) defect metrology has been widely utilized for failure mode analysis of memory devices. Variation in e-beam... » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Discovering Orbital Multiferroicity in Pentalayer Rhombohedral Graphene (MIT)
By Technical Paper Link - 24 Oct, 2023 - Comments: 0

A technical paper titled “Orbital Multiferroicity in Pentalayer Rhombohedral Graphene” was published by researchers at Massachusetts Institute of Technology. Abstract (partial): "Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-fu... » read more

FeFET Multi-Level Cells For In-Memory Computing In 28nm
By Technical Paper Link - 19 Oct, 2023 - Comments: 0

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of Technology Kanpur, Fraunhofer IPMS, RPTU Kaiserslautern-Landau, and Technical University of Munich. Abstract: "Advancements in AI led to the emergence of in-memory-computing architectures as a... » read more

Scalable And Compact Multi-Bit CAM Designs Using FeFETs
By Technical Paper Link - 16 Oct, 2023 - Comments: 0

A technical paper titled “SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search” was published by researchers at Zhejiang University, China, Georgia Institute of Technology, University of California Irvine, Rochester Institute of Technology, University of Notre Dame, and Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of ... » read more

Novel NVM Devices and Applications (UC Berkeley)
By Technical Paper Link - 06 Oct, 2023 - Comments: 0

A dissertation titled “Novel Non-Volatile Memory Devices and Applications” was submitted by a researcher at University of California Berkeley. Abstract Excerpt "This dissertation focuses on novel non-volatile memory devices and their applications. First, logic MEM switches are demonstrated to be operable as NV memory devices using controlled welding and unwelding of the contacting electro... » read more

Design Optimization Of Split-Gate NOR Flash For Compute-In-Memory
By Technical Paper Link - 19 Sep, 2023 - Comments: 0

A technical paper titled “Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications” was published by researchers at Seoul National University of Science and Technology and University of Seoul. Abstract: "The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memo... » read more

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