category: Memory

category: IoT, Security & Automotive

Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices
By Technical Paper Link - 03 Feb, 2022 - Comments: 0

Abstract "Memristive devices are two-terminal devices that can change their resistance state upon application of appropriate voltage stimuli. The resistance can be tuned over a wide resistance range enabling applications such as multibit data storage or analog computing-in-memory concepts. One of the most promising classes of memristive devices is based on the valence change mechanism in oxide... » read more

Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing
By Technical Paper Link - 27 Jan, 2022 - Comments: 0

Abstract "The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal of semiconductor industry for the next decade, as it may allow the extension of the Moore’s law, aids in in-memory computing and enables the fabrication of advanced devices beyond conventional complementary metal-oxide-semiconductor (CMOS) technology. However, most circuital demons... » read more

A crossbar array of magnetoresistive memory devices for in-memory computing
By Technical Paper Link - 14 Jan, 2022 - Comments: 0

Samsung has demonstrated the world’s first in-memory computing technology based on MRAM. Samsung has a paper on the subject in Nature. This paper showcases Samsung’s effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips. Abstract "Implementations of artificial neural networks that borrow analogue techniques could potentially offer low-po... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials
By Technical Paper Link - 23 Dec, 2021 - Comments: 0

Abstract "The main motivation of this review is to study the evolution of first and second level of interconnect materials used in memory device semiconductor packaging. Evolutions of bonding wires from gold (Au) to silver (Ag) or copper (Cu) have been reported and studied in previous literatures for low-cost solution, but Au wire still gives highest rating in terms of the performance of tempe... » read more

NeuroSim Simulator for Compute-in-Memory Hardware Accelerator: Validation and Benchmark
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract:   "Compute-in-memory (CIM) is an attractive solution to process the extensive workloads of multiply-and-accumulate (MAC) operations in deep neural network (DNN) hardware accelerators. A simulator with options of various mainstream and emerging memory technologies, architectures, and networks can be a great convenience for fast early-stage design space exploration of CIM hardw... » read more

Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract:  "Recent advances in deep learning have been driven by ever-increasing model sizes, with networks growing to millions or even billions of parameters. Such enormous models call for fast and energy-efficient hardware accelerators. We study the potential of Analog AI accelerators based on Non-Volatile Memory, in particular Phase Change Memory (PCM), for software-equivalent accurate i... » read more

Benchmarking Highly Parallel Hardware for Spiking Neural Networks in Robotics
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract: "Animal brains still outperform even the most performant machines with significantly lower speed. Nonetheless, impressive progress has been made in robotics in the areas of vision, motion- and path planning in the last decades. Brain-inspired Spiking Neural Networks (SNN) and the parallel hardware necessary to exploit their full potential have promising features for robotic applica... » read more

Factoring 2048-bit RSA Integers in 177 Days with 13 436 Qubits and a Multimode Memory
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract: "We analyze the performance of a quantum computer architecture combining a small processor and a storage unit. By focusing on integer factorization, we show a reduction by several orders of magnitude of the number of processing qubits compared with a standard architecture using a planar grid of qubits with nearest-neighbor connectivity. This is achieved by taking advantage of a tem... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy