Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Secure NFC-Based Wireless Battery Management System


A new technical paper titled "Wireless BMS Architecture for Secure Readout in Vehicle and Second life Applications" was published by researchers at TU Graz and NXP. Abstract "Battery management systems (BMS) are becoming increasingly important in the modern age, where clean energy awareness is getting more prominent. They are responsible for controlling large battery packs in modern elect... » read more

A Fast And Unified Toolchain For Rapid Design Space Exploration Of Chiplet Architectures


A technical paper titled “RapidChiplet: A Toolchain for Rapid Design Space Exploration of Chiplet Architectures” was published by researchers at ETH Zurich and University of Bologna. Abstract: "Chiplet architectures are a promising paradigm to overcome the scaling challenges of monolithic chips. Chiplets offer heterogeneity, modularity, and cost-effectiveness. The design space of chiplet ... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs


A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

Fast Interrupt Extension For MCU RISC-V


A technical paper titled “CV32RT: Enabling Fast Interrupt and Context Switching for RISC-V Microcontrollers” was published by researchers at ETH Zurich and University of Bologna. Abstract: "Processors using the open RISC-V ISA are finding increasing adoption in the embedded world. Many embedded use cases have real-time constraints and require flexible, predictable, and fast reactive handl... » read more

Continuous Energy Monte Carlo Particle Transport On AI HW Accelerators


A technical paper titled “Efficient Algorithms for Monte Carlo Particle Transport on AI Accelerator Hardware” was published by researchers at Argonne National Laboratory, University of Chicago, and Cerebras Systems. Abstract: "The recent trend toward deep learning has led to the development of a variety of highly innovative AI accelerator architectures. One such architecture, the Cerebras... » read more

CMOS-Based HW Topology For Single-Cycle In-Memory XOR/XNOR Operations


A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). Abstract: "Big data applications are on the rise, and so is the number of data centers. The ever-increasing massive data pool needs to be periodically backed up in a secure environment. Moreover, a ... » read more

Discrete Noise Approximation When Modeling The Effects Of Noise On Quantum Circuits


A technical paper titled “The Discrete Noise Approximation in Quantum Circuits” was published by researchers at HQS Quantum Simulations. Abstract: "When modeling the effects of noise on quantum circuits, one often makes the assumption that these effects can be accounted for by individual decoherence events following an otherwise noise-free gate. In this work, we address the validity of th... » read more

Potentials And Issues Of Designing Fault-Tolerant Hardware Acceleration For Edge-Computing Devices


A technical paper titled “Fault-Tolerant Hardware Acceleration for High-Performance Edge-Computing Nodes” was published by researchers at University of Rome. Abstract: "High-performance embedded systems with powerful processors, specialized hardware accelerators, and advanced software techniques are all key technologies driving the growth of the IoT. By combining hardware and software tec... » read more

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