98 Hardware Security Failure Scenarios (NIST)


A new technical paper titled "Hardware Security Failure Scenarios: Potential Hardware Weaknesses" was published by NIST. Abstract "Hardware is often assumed to be robust from a security perspective. However, chips are both created with software and contain complex encodings (e.g., circuit designs and firmware). This leads to bugs, some of which compromise security. This publication evaluate... » read more

Monitor Etch Defects on Dies in the Outer Regions Of The Wafer Using ISR


A technical paper titled "Detection of defective chips from nanostructures with a high-aspect ratio using hyperspectral imaging and deep learning" was published by researchers at Samsung Electronics. Abstract: "We have developed an imaging spectroscopic reflectometry (ISR) method based on hyperspectral imaging and deep learning to detect defects in the bottom region of high-aspect-ratio nan... » read more

Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more

Characterizing Defects Inside Hexagonal Boron Nitride (KAIST, NYU, et al.)


A new technical paper titled "Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors" was published by researchers at KAIST, NYU, Brookhaven National Laboratory, and National Institute for Materials Science. Abstract: "Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantu... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Review of Automatic EM Image Algorithms for Semiconductor Defect Inspection (KU Leuven, Imec)


A new technical paper titled "Electron Microscopy-based Automatic Defect Inspection for Semiconductor Manufacturing: A Systematic Review" was published by researchers at KU Leuven and imec. Abstract: "In this review, automatic defect inspection algorithms that analyze Electron Microscope (EM) images of Semiconductor Manufacturing (SM) products are identified, categorized, and discussed. Thi... » read more

Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

Method To Determine The Permittivity of Dielectric Materials in 3D Integrated Structures At Broadband RF Frequencies


A new technical paper titled "Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz" was published by researchers at NIST. Abstract "We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave ele... » read more

Relative Humidity in Conductive Atomic Force Microscopy (KAUST)


A new technical paper titled "The Effect of Relative Humidity in Conductive Atomic Force Microscopy" was published by researchers at KAUST. Abstract "Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field o... » read more

Steps to Fabricate Nanotips Overhanging From Chip Edge By a Few Micrometers (CNRS, CEA-Leti)


A new technical paper titled "Suspended tip overhanging from chip edge for atomic force microscopy with an optomechanical resonator" was published by researchers at Lab. d'Analyse et d'Architecture des Systèmes du CNRS and CEA-LETI. Abstract Raising the mechanical frequency of atomic force microscopy (AFM) probes to increase the measurement bandwidth has been a long-standing expectation in... » read more

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