Exploiting the full potential of GaN.
This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical application examples and circuit schematics complement the paper.
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