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Week In Review: Manufacturing, Test


Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs


This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Manufacturing Bits: May 25


Higher voltage GaN Imec and Aixtron have demonstrated the ability to extend gallium-nitride (GaN) to new voltage levels in the power semiconductor market, enabling the technology to compete in much broader segments. Imec and Aixtron have demonstrated epitaxial growth of GaN buffer layers qualified for 1,200-volt applications on specialized 200mm substrates with a hard breakdown exceeding 1,... » read more

Week In Review: Design, Low Power


Synopsys completed its acquisition of MorethanIP, a provider of Ethernet Digital Controller IP supporting data rates from 10G to 800G. The acquisition adds MAC (Medium Access Controller) and PCS (Physical Coding Sublayer) for 200G/400G and 800G Ethernet to Synopsys’ portfolio. The company also provides Time-Sensitive Networking, Fibre Channel, and Ethernet Switching IP for integration into AS... » read more

Overcoming Next-Generation AESA Radar Design Challenges


Phased array antennas were first used in military radar systems to scan the radar beam quickly across the sky to detect planes and missiles. These systems are becoming popular for a variety of applications and new active electronically scanned arrays (AESAs) are being used for radar systems in satellites and unmanned aerial vehicles. As these systems are deployed in new and novel ways, size and... » read more

Power/Performance Bits: March 8


Non-toxic, printable piezoelectric Researchers at RMIT University and University of New South Wales developed a flexible and printable piezoelectric material that could be used in self-powered electronics including wearables and implantables. "Until now, the best performing nano-thin piezoelectrics have been based on lead, a toxic material that is not suitable for biomedical use," said Dr N... » read more

Increasing The Conductive Density Of Packaging


Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

Power Converter Chip Research Booms


Power electronics are booming, fueled by demand ranging from induction chargers for wearable and portable electronics, to charging stagings for electric vehicles. An estimated 80% of all U.S. electricity will pass through some form of power converter by 2030, said Yogesh Ramadass, director of power management at Texas Instruments' Kilby Labs. Transportation applications, in particular, deman... » read more

48V Applications Drive Power IC Package Options


The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more

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