RF GaN Gains Steam


Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Week In Review: Manufacturing, Test


Market research Smartphone shipments in China stood at 98.9 million units in the third quarter of 2019, down 3.6% year-on-year, according to IDC. Of that, 5G phone shipments in China have grown from virtually zero not long ago to 485,000 units in the third quarter of 2019, according to IDC. Vendors shipped devices amid the launch of commercial 5G services in October. The early smartphone le... » read more

SiC Market Moves Into Overdrive


The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Wolfspeed GaN: Rugged Enough For Tracking Space Junk, Rugged Enough For 5G


GaN RF devices are used throughout the world on projects in a broad range of applications such as surveillance and weather radar, first responder communications, and improvised explosive device (IED) protection systems, where downtime is not an option. But are they rugged and reliable enough to tackle the harshest environments the telecom market can hand out, especially as it relates to 5G smal... » read more

Manufacturing Bits: Sept. 3


Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies


This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

Week In Review: Manufacturing, Test


Chipmakers TSMC posted mixed results for the second quarter. It also presented a mixed outlook for the third quarter, according to various reports. TSMC and Samsung are in the midst of a foundry battle at 7nm and 5nm. “TSMC raised its 2019 capex outlook to over $11B, up from prior guidance of $10B-$11B. The increased capex is to support 5nm and 7nm ramps, with accelerated 5G investment a... » read more

Wide Band Gap—The Revolution In Power Semiconductors


New government regulations and industry standards are leading companies to adopt wide bandgap (WBG) power solutions, both to reduce their carbon footprint and to meet increasing demand for higher power systems aimed at electric vehicles, renewable energy, datacenters, and other markets. The automotive industry is one of the biggest markets driving demand for WBG power devices. The European U... » read more

A Novel Design Method of Highly Efficient Saturated Power Amplifier Based On Self-Generated Harmonic Currents


A novel design method without requiring the special harmonic termination circuit for a highly efficient power amplifier (PA) is proposed. The proposed PA is driven into saturated operation, from the linear to knee region, by adjusting the only fundamental load, and the saturated operation induces self-generated harmonic currents. The current and voltage waveforms can be shaped easily by the har... » read more

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