tag: GaN

GaN Power Devices Power Up
By Katherine Derbyshire - 03 Jun, 2026 - Comments: 0

Key Takeaways: GaN devices are gaining traction due to their ability to tolerate higher voltages. New approaches such as chiplets offer faster switching with less loss. The first applications to benefit from GaN will be low-voltage consumer devices; industrial applications require more work. As electrical power displaces fossil fuels in more applications, system designers ne... » read more

Power And Sensing – Selection Guide 2026
By Infineon - 06 May, 2026 - Comments: 0

The semiconductor industry is undergoing a transformation. This transformation is driven by the critical role semiconductors play in decarbonization and digitalization and their ability to enable innovation across fields at an unprecedented scale. Recent advancements in AI, autonomous driving, humanoid robots, and our increasingly connected lifestyles are just a few examples of the rapid change... » read more

Breakthrough Thin GaN Chiplet Technology
By Han Wui Then - 16 Apr, 2026 - Comments: 0

Researchers at Intel Foundry have demonstrated a gallium nitride (GaN) chiplet technology built on 300 mm GaN-on-silicon wafers, marking a significant leap forward in semiconductor design. Presented at the 2025 IEEE International Electron Devices Meeting (IEDM), this work tackles one of the most pressing challenges in modern computing: how to deliver more power, speed, and efficiency in an incr... » read more

The Specialty Device Surge Part 2: The Process Control Challenges Of MEMS, Co-Packaged Optics, And More
By Christopher Haire - 07 Apr, 2026 - Comments: 0

In a world where high-bandwidth memory, GPUs, and advanced AI packages are all the rage, it is easy to forget the important role specialty devices play. These unsung heroes of modern life perform critical functions across a wide range of industries, including automotive, telecommunications, data centers, emerging AI hardware ecosystems, and consumer electronics, just like the smartphone in your... » read more

A Guide To Fast Switching GaN Challenges And Solutions
By Kimia Azad - 05 Mar, 2026 - Comments: 0

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While the wide-bandgap material can certainly improve a system’s overall efficiency, it can also be more vulnerable to spurious turn-ons and other design challenges. That’s what makes top-of-the-line packaging, such as Infineon HiRel’s new PowIR-SMD, critical in space powe... » read more

Optimize Digital Payloads With Radiation Hardened GaN
By Kimia Azad - 05 Feb, 2026 - Comments: 0

As the demand for greater communication bandwidth continues to grow, next-generation satellites must deliver higher data throughput for digital payloads. This shift to digital payloads requires engineers to reassess key design parameters, such as material needs, operational factors, and radiation robustness, to ensure optimal performance in their space power systems. Infineon HiRel’s new radi... » read more

Semiconductor Supply Chain Security Using Side-Channel Power Measurements and Generative Adversarial Networks (Cornell)
By Technical Paper Link - 26 Jan, 2026 - Comments: 0

A new technical paper titled "Out-of-Band Power Side-Channel Detection for Semiconductor Supply Chain Integrity at Scale" was published by researchers at Cornell University. Abstract "Out-of-band screening of microcontrollers is a major gap in semiconductor supply chain security. High-assurance techniques such as X-ray and destructive reverse engineering are accurate but slow and expensiv... » read more

Topology Selection For Bidirectional Energy Flow Applications Using WBG Devices
By Infineon - 07 Jan, 2026 - Comments: 0

The paper provides an overview of the topology for bidirectional converters and discusses their different usage. Bidirectional energy flow applications are usually found in energy storage systems, battery systems, and can be categorized as grid-connected and DC-DC-connected. In grid-connected applications, two power conversion stages, which are power factor corrector (PFC) rectifier/inverter an... » read more

The Race To Replace Silicon
By M. Rameez Arif - 24 Jul, 2025 - Comments: 1

For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

Research Bits: July 1
By Jesse Allen - 01 Jul, 2025 - Comments: 0

Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

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