tag: GaN

Research Bits: June 18
By Jesse Allen - 18 Jun, 2024 - Comments: 0

Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

Liquid Cooling And GaN: A Winning Combination
By Paul Wiener - 06 Jun, 2024 - Comments: 0

Data centers are facing an unprecedented transformation due to the surge in generative AI and other emerging technologies. A single ChatGPT session consumes 50 to 100 times more energy than a comparable Google search, escalating data center rack power requirements towards 200 kW or more, presenting serious challenges for operators. Cooling, in fact, takes up about 40% of the power requireme... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures
By Technical Paper Link - 28 May, 2024 - Comments: 0

A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED
By Technical Paper Link - 02 May, 2024 - Comments: 0

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design
By Shela Aboud - 18 Apr, 2024 - Comments: 0

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and impactful electrification is now under way for electric vehicles (EVs). Beyond the transition to electric engines, several new features and technologies are driving the electrification of vehicles... » read more

Optimized Drivetrain And New Semiconductor Technologies Enable The Design Of Energy-Efficient Electric Vehicles
By Infineon - 06 Mar, 2024 - Comments: 0

The traction inverter is the core component of the drivetrain in all-electric vehicles, making it the most essential system: The device plays a crucial role in enabling efficient and sustainable electromobility since it directly influences the power output and significantly affects the vehicle’s dynamics. However, to develop efficient electric vehicles the integration of complementary sub... » read more

What’s Next For Power Electronics? Beyond Silicon
By Emily Yan - 29 Feb, 2024 - Comments: 0

For more than half a century, silicon has been the bedrock of power electronics. Yet as silicon meets its physical limitations in higher-power, higher-temperature applications, the industry’s relentless pursuit of more efficient power systems has ushered in the wide bandgap (WBG) semiconductors era. The global WBG semiconductors market reached $1.6 billion in 2022, with an estimated CAGR of ... » read more

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design
By Shela Aboud - 22 Jan, 2024 - Comments: 0

Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy