GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED


A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design


The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and impactful electrification is now under way for electric vehicles (EVs). Beyond the transition to electric engines, several new features and technologies are driving the electrification of vehicles... » read more

Optimized Drivetrain And New Semiconductor Technologies Enable The Design Of Energy-Efficient Electric Vehicles


The traction inverter is the core component of the drivetrain in all-electric vehicles, making it the most essential system: The device plays a crucial role in enabling efficient and sustainable electromobility since it directly influences the power output and significantly affects the vehicle’s dynamics. However, to develop efficient electric vehicles the integration of complementary sub... » read more

What’s Next For Power Electronics? Beyond Silicon


For more than half a century, silicon has been the bedrock of power electronics. Yet as silicon meets its physical limitations in higher-power, higher-temperature applications, the industry’s relentless pursuit of more efficient power systems has ushered in the wide bandgap (WBG) semiconductors era. The global WBG semiconductors market reached $1.6 billion in 2022, with an estimated CAGR of ... » read more

Why Is The Power Device Market So Hot Right Now?


Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design


Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors


A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Big Shifts In Power Electronics Packaging


The power semiconductor market is poised for remarkable growth in the next several years, fueled by the adoption of electric vehicles and renewable energy, but it also driving big changes in the packaging needed to protect and connect these devices. Packaging is playing an increasingly critical role in the transition to higher power densities, enabling more efficient power supplies, power deli... » read more

Addressing Trench Structures And Larger Wafers For Power Devices


Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

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