A novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach.
In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional groups, the structure and property of the hardmasks can be tuned effectively, especially in the aspects of surface energy, elemental composition, and hardness.
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Authors are Yichen Liang, Andrea M. Chacko, Samantha Oelklaus, Ethan Lowrey, Veerle Van Driessche, Ivan R. Sedlacek, Ming Luo, Stephen M. Grannemann, Douglas J. Guerrero, all from Brewer Science, Inc. (United States).
Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 1132614 (2020) https://doi.org/10.1117/12.2551671
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States
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