Improving Wafer-Level S-Parameters Measurement Accuracy And Stability With Probe-Tip Power Calibration Up To 110 GHz For 5G Applications

A novel method of probe-tip power calibration for S-parameters calibration is shown to greatly improve DC biasing and S-parameters measurement accuracy.

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Author: Choon Beng Sia, FormFactor Inc., Singapore

Demands for mission critical wireless services such as autonomous driving and telehealth require higher data transfer rates and lower latencies. Such applications are now driving the use of radio frequencies (RF) at 28, 38, 60 and 73 GHz for the emerging 5G mobile communication systems. Waferlevel RF measurements of devices or circuits for 5G applications are extremely challenging due to huge system losses and calibrated state at the probe tips valid only for about 10 minutes. This paper presents a novel method of probe-tip power calibration for S-parameters calibration which is shown to greatly improve DC biasing accuracy, S-parameters measurement accuracy and post calibration stability up to 110 GHz. The new method allows precise and low probe tip source power biasing of -20 dBm, without affecting calibration
performance. It also increases system calibration stability to more than 4 hours, giving microwave engineers adequate time to test their RF devices and circuits by avoiding the need to perform frequent re-calibration, greatly enhancing test throughput.

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