Using secondary ion mass spectroscopy (SIMS) in-line to measure peak concentration, peak depth, and dose simultaneously provides better implant process control.
In the semiconductor industry, ion implantation process has expanded to a wide range of applications with doses and energies spanning several orders of magnitude.
Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from higher aspect ratio of photoresist opening, ion channeling or de-channeling effects due to implant angle variations, and dose and implant energy accuracies are all important factors in achieving uniform device performance and good product yield. In addition, current process controls are done on test wafers with certain time intervals, where broken sample pieces are sent outside of the fab for SIMS analysis. The turnaround time is generally long, and the results often do not reflect the actual production conditions. It is known in some cases that, while the control charts are in good standing, the product has failed to meet its specification. The demand for consistent implantation material is becoming more and more important. Hence, the desire for better implant process control is sorely needed.
This paper explores how utilizing Secondary Ion Mass Spectroscopy, (SIMS) in-line to measure peak concentration, peak depth, and dose simultaneously to provide better implant process control.
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