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Improved graphene-base heterojunction transistor with different collector semiconductors for high-frequency applications


New research paper from TU Dresden & others. Abstract "A new kind of transistor device with a graphene monolayer embedded between two n-typesilicon layers is fabricated and characterized. The device is called graphene-base heterojunction transistor (GBHT). The base-voltage controls the current of the device flowing from the emitter via graphene to the collector. The transit time for e... » read more