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Improved graphene-base heterojunction transistor with different collector semiconductors for high-frequency applications

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New research paper from TU Dresden & others.

Abstract

“A new kind of transistor device with a graphene monolayer embedded between two n-typesilicon layers is fabricated and characterized. The device is called graphene-base heterojunction transistor (GBHT). The base-voltage controls the current of the device flowing from the emitter via graphene to the collector. The transit time for electrons passing by the ultrathin graphene layer is extremely short which makes the device very promising for high frequency RF-electronics. The output current of the device is saturated and clearly modulated by the base voltage. Further, the silicon collector of the GBHT is replaced by germanium to improve the device performance. This enabled the collector current to be increased by almost three orders of magnitude. Also, the common-emitter current gain (Ic/Ib) increased from 10-3 to approximately 0.3 for the newly designed device. However, the ON-OFF ratio of the improved germanium based GBHT has so far been rather low. Further optimizations are necessary in order to fully exploit the potential of the graphene-base heterojunction transistor.”

Find the open access technical paper here. published 2022.

Carsten Strobel, Carlos Chavarin, Sebastian Leszczynski, Karola Richter, Martin Knaut, Johanna Reif, Sandra Voelkel, Matthias Albert, Christian Wenger, Johann Wolfgang Bartha, Thomas Mikolajick. Advanced Materials Letters, 2022, Volume 13, Issue 1, Pages 2201-1688.

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