The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance


In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials


A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

How Low Can You Go? Pushing The Limits Of Transistors


Deep low voltage enablement of embedded memories and logic libraries to achieve extreme low power: Rising demand for cutting-edge mobile, IoT, and wearable devices, along with high compute demands for AI and 5G/6G communications, has driven the need for lower power systems-on-chip (SoCs). This is not only a concern for a device’s power consumption when active (dynamic power), but also when... » read more

Asynchronously Parallel Optimization Method For Sizing Analog Transistors Using Deep Neural Network Learning


A new technical paper titled "APOSTLE: Asynchronously Parallel Optimization for Sizing Analog Transistors Using DNN Learning" was published by researchers at UT Austin and Analog Devices. Abstract "Analog circuit sizing is a high-cost process in terms of the manual effort invested and the computation time spent. With rapidly developing technology and high market demand, bringing automated s... » read more

Biocompatible Bilayer Graphene-Based Artificial Synaptic Transistors (BLAST) Capable of Mimicking Synaptic Behavior


This new technical paper titled "Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing" was published by researchers at The University of Texas at Austin and Sandia National Laboratories. Abstract "CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to para... » read more

Improved graphene-base heterojunction transistor with different collector semiconductors for high-frequency applications


New research paper from TU Dresden & others. Abstract "A new kind of transistor device with a graphene monolayer embedded between two n-typesilicon layers is fabricated and characterized. The device is called graphene-base heterojunction transistor (GBHT). The base-voltage controls the current of the device flowing from the emitter via graphene to the collector. The transit time for e... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors


Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

Power/Performance Bits: March 31


Tellurium transistors Researchers from Purdue University, Washington University in St Louis, University of Texas at Dallas, and Michigan Technological University propose the rare earth element tellurium as a potential material for ultra-small transistors. Encapsulated in a nanotube made of boron nitride, tellurium helps build a field-effect transistor with a diameter of two nanometers. ... » read more

The 7nm Pileup


The number of 7nm designs is exploding. Cadence alone reports 80 new 7nm chips under design. So why now, and what does this all mean? First of all, 7nm appears to be the next 28nm. It's a major node, and it intersects with a number of broad trends that are happening across the industry, all of which involve AI in one way or another. The big question now is how many of them will survive long ... » read more

Top Stories For 2018


Each year, I look back to see what articles people like to read. The first thing that has amazed me each year at Semiconductor Engineering is that what should be a strong bias towards articles published early in the year never seems to play out. The same is true this year. More than half of the top articles were published after July. The second thing that remains constant is that people love... » read more

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