Roadmap for AI HW Development, With The Role of Photonic Chips In Supporting Future LLMs (CUHK, NUS, UIUC, Berkeley)


A new technical paper titled "What Is Next for LLMs? Next-Generation AI Computing Hardware Using Photonic Chips" was published by researchers at The Chinese University of Hong Kong, National University of Singapore, University of Illinois Urbana-Champaign and UC Berkeley. Abstract "Large language models (LLMs) are rapidly pushing the limits of contemporary computing hardware. For example, t... » read more

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)


A new technical paper titled "Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by ana... » read more

2D Materials Roadmap: Current And Future Challenges, Solutions


A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Research Bits: Mar. 10


Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

Synthesis Of An Ultrathin Vanadium Dioxide Film On A Flexible Substrate, Preserving Film’s Electrical Properties


A new technical paper titled "Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior" was published by researchers at Osaka University and National Institute for Materials Science. Abstract "We report on the preparation of vanadium dioxide (VO2) ul... » read more

Simulation Study Of Vertically Stacked 2D NSFETs


A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Patterning Doping On Very Large Monolayer MoS2 (NREL)


A new technical paper titled "Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS2 Films" was published by researchers at National Renewable Energy Laboratory (NREL) and Renewable & Sustainable Energy Institute (RASEI). "In this work, we unravel the mechanism that drives PL* changes of MoS2 monolayers under laser illumination in ambient conditions. We demonstrate the critical ... » read more

Review of Advances in 3D integration of 2D Neuromorphic Electronics, Materials to Systems


A new technical paper titled "2D materials-based 3D integration for neuromorphic hardware" was published by researchers at  Seoul National University and University of Southern California. Find the technical paper here. November 2024. Kim, S.J., Lee, HJ., Lee, CH. et al. 2D materials-based 3D integration for neuromorphic hardware. npj 2D Mater Appl 8, 70 (2024). https://doi.org/10.10... » read more

Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

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