tag: 2D materials

Research Bits: April 23
By Jesse Allen - 23 Apr, 2024 - Comments: 0

Probabilistic computer prototype Researchers at Tohoku University and the University of California Santa Barbara created a prototype of a heterogeneous probabilistic computer that combines a CMOS circuit with a limited number of stochastic nanomagnets. It aims to improve the execution of probabilistic algorithms used to solve problems where uncertainty is inherent or where an exact solution... » read more

2D van der Waals Magnets Above Room Temperature (MIT)
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials
By Technical Paper Link - 15 Mar, 2024 - Comments: 0

A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

Large-Scale Integration Of 2D Materials As The Semiconducting Channel In An In-Memory Processor (EPFL)
By Technical Paper Link - 03 Jan, 2024 - Comments: 0

A technical paper titled “A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories” was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL). Abstract: "Data-driven algorithms—such as signal processing and artificial neural networks—are required to process and extract meaningful information from the mass... » read more

Research Bits: Dec. 18
By Jesse Allen - 18 Dec, 2023 - Comments: 0

Stacking 2D layers for AI processing Researchers from Washington University in St. Louis, MIT, Yonsei University, Inha University, Georgia Institute of Technology, and the University of Notre Dame demonstrated monolithic 3D integration of layered 2D material, creating a novel AI processing hardware that integrates sensing, signal processing, and AI computing functions into a single chip. Th... » read more

A Polymer-Free Technique For Assembling Van Der Waals Heterostructures Using Flexible Si Nitride Membranes
By Technical Paper Link - 12 Dec, 2023 - Comments: 0

A technical paper titled “Clean assembly of van der Waals heterostructures using silicon nitride membranes” was published by researchers at University of Manchester, Imperial College London, National Institute for Materials Science (Japan), and University of Lancaster. Abstract Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional mater... » read more

Chip Industry Week In Review
By The SE Staff - 08 Dec, 2023 - Comments: 0

By Jesse Allen, Karen Heyman, and Liz Allan AMD took the covers off new AI accelerators for training and inferencing of large language model and high-performance computing workloads. In its announcement, AMD focused heavily on performance leadership in the commercial AI processor space through a combination of architectural changes, better software efficiency, along with some improvements in... » read more

Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs
By Technical Paper Link - 26 Nov, 2023 - Comments: 0

A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

A Modelling Approach To Well-Known And Exotic 2D Materials For Next-Gen FETs
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich. Abstract: "Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity... » read more

Discovering Orbital Multiferroicity in Pentalayer Rhombohedral Graphene (MIT)
By Technical Paper Link - 24 Oct, 2023 - Comments: 0

A technical paper titled “Orbital Multiferroicity in Pentalayer Rhombohedral Graphene” was published by researchers at Massachusetts Institute of Technology. Abstract (partial): "Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-fu... » read more

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