tag: 2D materials

Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes
By Technical Paper Link - 27 Jun, 2023 - Comments: 0

A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

Latest Discoveries in the Mechanics of 2D Materials
By Technical Paper Link - 31 May, 2023 - Comments: 0

A new technical paper titled "Recent advances in the mechanics of 2D materials" was published by researchers at McGill University, University of Science and Technology of China, and University of Illinois. "We review significant advances in the understanding of the elastic properties, in-plane failures, fatigue performance, interfacial shear/friction, and adhesion behavior of 2D materials. I... » read more

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)
By Technical Paper Link - 06 May, 2023 - Comments: 0

A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)
By Technical Paper Link - 05 May, 2023 - Comments: 0

A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

Using The Schottky Barrier Transistor in Various Applications & Material Systems
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

Optimizing The Growth And Transfer Process of Graphene (Cambridge, RWTH Aachen)
By Technical Paper Link - 21 Apr, 2023 - Comments: 0

A technical paper titled "Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene" was published by researchers at University of Cambridge, RWTH Aachen University, and National Institute for Materials Science. Abstract: "Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a ch... » read more

New Group Of Non-vdW 2D Materials Derived From Non-Layered Crystals Exhibiting Ultra Low Exfoliation Energies
By Technical Paper Link - 11 Apr, 2023 - Comments: 0

A new technical paper titled "A New Group of 2D Non-van der Waals Materials with Ultra Low Exfoliation Energies" was published by TU Dresden, HZDR, and Aalto University. Abstract: "The exfoliation energy—quantifying the energy required to extract a two-dimensional (2D) sheet from the surface of a bulk material—is a key parameter determining the synthesizability of 2D compounds. Here, ... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

Large Area Synthesis of 2D Material Hexagonal Boron Nitride, Improving Device Characteristics of Graphene
By Technical Paper Link - 08 Mar, 2023 - Comments: 0

A new technical paper titled "Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays" was published by researchers at Kyushu University, National Institute of Advanced Industrial Science and Technology (AIST), and Osaka University. Abstract "Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properti... » read more

Devices And Transistors For The Next 75 Years
By Laura Peters - 16 Feb, 2023 - Comments: 0

The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, and what will be the next great memory architecture.[1] Industry veterans from the memory, logic, and research communities see high-NA EUV production, NAND flash with 1,000 layers, and hybrid bon... » read more

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