Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD

A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

The resurrection of tellurium as an elemental two-dimensional semiconductor

Abstract "The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, ... » read more