Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)


A new technical paper titled "Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides" was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. Abstract "Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional se... » read more

Doping Mechanism Of Pure Nitric Oxide In Tungsten Diselenide Transistors (Purdue, MIT, NYCU)


A technical paper titled "Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors" was published by researchers at Purdue University, MIT and National Yang Ming Chiao Tung University (with support from Intel Corporation). "Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessi... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD


A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

The resurrection of tellurium as an elemental two-dimensional semiconductor


Abstract "The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, ... » read more