Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled “How to Report and Benchmark Emerging Field-Effect Transistors” was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others.

“Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.”

Find the technical paper here. Last revised July 2022.

arXiv:2203.16759v3. Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter.

More Transistors technical papers in our library
Nudging 2D Semiconductors Forward
Stacked nanosheet transistors promise to extend silicon’s reign beyond the finFET era.
New Materials Open Door To New Devices
2D materials add process challenges, but deliver significant performance benefits.

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