tag: Field-effect transistor

Understanding Why Drain-Current in GAAFETs Deviates from Thermionic Dependence at Negative Gate Voltages (Sandia National Lab, LIST)
By Technical Paper Link - 05 May, 2026 - Comments: 0

A new technical paper, "Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors," was published by researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology. Abstract "Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect tra... » read more

Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH)
By Technical Paper Link - 20 Mar, 2026 - Comments: 0

A new technical paper, "Revealing and Engineering Contact-Origin Noise in Ultrathin Tellurium Transistors," was published by researchers at Pohang University of Science and Technology. Abstract "Tellurium (Te) has emerged as a promising p-type semiconductor for ultrathin electronics owing to its strong air stability, excellent hole transport, narrow bandgap, and BEOL-integration compatibi... » read more

SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)
By Technical Paper Link - 07 Jan, 2026 - Comments: 0

A new technical paper titled "A Cryogenic Ultra-Thin Body SiGeSn Transistor" was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for Sustainable Materials. Abstract "Transistors capable of operating at cryogenic temperatures are key components for the fast and energy-efficient control and readout of qubits. However, the ultra... » read more

Free-Space Gated Transistor In Wide Bandgap And Ultra Wide Bandgap Semiconductors (KAUST Et Al.)
By Technical Paper Link - 10 Nov, 2025 - Comments: 0

A new technical paper titled "Lateral Semiconductor–Free-Space Gate Transistors" was published by researchers at KAUST and the Indian Institute of Technology. Abstract "We introduce a novel lateral transistor architecture, the semiconductor−free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor−free-space gate configuration with su... » read more

Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors
By Technical Paper Link - 11 Jan, 2024 - Comments: 0

A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

How Different Metal Depositions Affect The Structure And Charge Transport Of 9-A Graphene Nanoribbons
By Technical Paper Link - 06 Dec, 2023 - Comments: 0

A technical paper titled “Contact engineering for graphene nanoribbon devices” was published by researchers at University of Arizona, Swiss Federal Labs for Materials Science and Technology, University of California Berkeley, Stanford University, SRM Institute of Science and Technology, Texas A&M University, Lawrence Berkeley National Laboratory (LBNL), Max Planck Institute for Polymer... » read more

Friction Between Single Layer Graphene And An Atomic Force Microscope Tip
By Technical Paper Link - 27 Sep, 2023 - Comments: 0

A technical paper titled “Dynamically tuning friction at the graphene interface using the field effect” was published by researchers at University of Illinois Urbana-Champaign and University of California Irvine. Abstract: "Dynamically controlling friction in micro- and nanoscale devices is possible using applied electrical bias between contacting surfaces, but this can also induce unwant... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

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