How Different Metal Depositions Affect The Structure And Charge Transport Of 9-A Graphene Nanoribbons


A technical paper titled “Contact engineering for graphene nanoribbon devices” was published by researchers at University of Arizona, Swiss Federal Labs for Materials Science and Technology, University of California Berkeley, Stanford University, SRM Institute of Science and Technology, Texas A&M University, Lawrence Berkeley National Laboratory (LBNL), Max Planck Institute for Polymer Research, and University of Bern.

Abstract excerpt:

“In this study, we investigated the impact of different electron-beam deposited contact metals—the commonly used palladium (Pd) and softer metal indium (In)—on the structural properties and field-effect transistor performance of semiconducting nine-atom wide armchair GNRs [graphene nanoribbons]. The performance and integrity of the GNR channel material were studied by means of a comprehensive Raman spectroscopy analysis, scanning tunneling microscopy (STM) imaging, optical absorption calculations, and transport measurements.”

Find the technical paper here. Published November 2023.

Mutlu, Zafer, Christina Dinh, Gabriela Borin Barin, Peter H. Jacobse, Aravindh Kumar, Debanjan Polley, Hanuman Singh et al. “Contact engineering for graphene nanoribbon devices.” Applied Physics Reviews 10, no. 4 (2023).

Further Reading
2D Semiconductor Materials Creep Toward Manufacturing
TMDs improve electron mobility in very thin channels, but volume manufacturing remains challenging.

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