tag: Stanford University

Chip Industry Week In Review
By The SE Staff - 22 Nov, 2024 - Comments: 0

SK hynix started mass production of 1-terabit  321-high NAND, with availability scheduled for the first half of next year. Rapidus will receive an additional ¥200 billion yen ($1.28B) from the Japanese government beginning in fiscal year 2025, reports Nikkei. This is on top of ¥920 billion yen ($5.98B) Rapidus has already received from the government in support of its goal to reach commer... » read more

Chip Industry Technical Paper Roundup: Oct. 22
By Linda Christensen - 22 Oct, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=371 /]   More Reading Chip Industry Week In Review AI CPU chiplet platform; Intel-AMD pact; GDDR7 DRAM; AI-RFIC funding; CHIPS Act awards; NoC tiling; thermal modeling on chiplets; $900M nuclear tech and more. Technical Paper Library home » read more

Chip Industry Week In Review
By The SE Staff - 18 Oct, 2024 - Comments: 0

Arm joined forces with Korea's Samsung Foundry, ADTechnology, and Rebellions to create a CPU chiplet platform for AI training and inference. The new chiplet will be based on Samsung's 2nm gate-all-around technology. Intel and AMD, arch competitors for decades, formed an x86 ecosystem advisory group to collaborate on architectural interoperability and simplify software development. Samsung... » read more

3D Device With BEOL-Compatible Channel And Physical Design for Efficient Double-Side Routing
By Technical Paper Link - 17 Oct, 2024 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3D Logic with Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation, and Carnegie Mellon University. Abstract "This paper presents Omni 3D - a 3D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D arbitrarily interleaves ... » read more

Research Bits: Oct. 8
By Liz Allan - 08 Oct, 2024 - Comments: 0

Soft, flexible polymer semiconductors Stanford University materials scientists used a specialized electron microscope – cryo-electron microscopy (Cryo 4D-STEM) – to explore the microstructure of soft semiconductors that could lead to new-generation electronics. Organic mixed ionic-electronic conductors (OMIECs) are soft, flexible polymer semiconductors with promising electrochemical qua... » read more

Chip Industry Technical Paper Roundup: Oct. 8
By Linda Christensen - 08 Oct, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=365 /] More ReadingTechnical Paper Library home » read more

Multi-Node, Virtualized Neuromorphic Architecture
By Technical Paper Link - 06 Oct, 2024 - Comments: 0

A new technical paper titled "NeuroVM: Dynamic Neuromorphic Hardware Virtualization" was published by researchers at Stanford University, UT Austin and Temsa Research & Development Center. Abstract "This paper introduces a novel approach in neuromorphic computing, integrating heterogeneous hardware nodes into a unified, massively parallel architecture. Our system transcends traditional ... » read more

Chip Industry Technical Paper Roundup: Sept. 24
By Linda Christensen - 24 Sep, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=358 /] More ReadingTechnical Paper Library home » read more

Improving The Air-Stability and NBTI Reliability of BEOL CNFETs
By Technical Paper Link - 19 Sep, 2024 - Comments: 0

A new technical paper titled "Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors" was published by researchers at MIT, Stanford University, Carnegie Mellon University and Analog Devices. Abstract: "Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among ... » read more

Chip Industry Week In Review
By The SE Staff - 13 Sep, 2024 - Comments: 0

Infineon rolled out the world's first 300mm gallium nitride (GaN) wafer, opening the door for high-volume manufacturing of GaN-based power semiconductors. A 300mm wafer contains 2.3 times as many chips per wafer as a 200mm wafer. Fig.1: Infineon's 300mm GaN wafer. Source: Infineon The Semiconductor Industry Association released its 2024 State of the U.S. Semiconductor Industry report th... » read more

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