Chip Industry Technical Paper Roundup: Jan 6


New technical papers recently added to Semiconductor Engineering’s library: [table id=510 /] Find more semiconductor research papers here. » read more

DL Atomistic Semi-Empirical Pseudopotential Model For Nanomaterials (UC Berkeley, LBNL et al.)


A new technical paper titled "Deep-learning atomistic semi-empirical pseudopotential model for nanomaterials" was published by researchers at UC Berkeley, Lawrence Berkeley National Laboratory et al. Abstract "The semi-empirical pseudopotential method (SEPM) has been widely applied to provide computational insights into the electronic structure, photophysics, and charge carrier dynamics of ... » read more

Chip Industry Week In Review


China's Hefei Lumiverse Technology reportedly has developed a desktop-sized High Harmonic Generation light source that generates wavelengths as small as 1nm. One customer already has used it to produce 14nm chips, which was the original target node for EUV, according to one report. As a point of comparison, TSMC and Samsung didn't start using EUV until the 7nm node, relying instead on immersion... » read more

Chip Industry Technical Paper Roundup: Nov. 4


New technical papers recently added to Semiconductor Engineering’s library: [table id=488 /] Find more semiconductor research papers here. » read more

An Overview Of Recent Progress On The EUV + DSA Strategy (Univ. of Chicago, Berkeley Lab, Argonne)


A new technical paper titled "Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography" was published by researchers at University of Chicago, Lawrence Berkeley National Laboratory and Argonne National Laboratory. Abstract "Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but face... » read more

Chip Industry Technical Paper Roundup: Oct. 13


New technical papers recently added to Semiconductor Engineering’s library: [table id=482 /] Find more semiconductor research papers here. » read more

Research Bits: Oct. 7


Doping oxide insulator improves SiGe conductivity Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor. Called modulation acceptor doping (MAD), the technique ena... » read more

First Stage Of Nanoscale Imaging In Positive-Tone EUV Photoresists: The Impact Of Polymer Sequence (Berkeley Lab, Columbia Hill)


A new technical paper titled "Initial stage of nanoscale imaging in positive-tone extreme UV photoresists: the influence of polymer sequence" was published by researchers at Lawrence Berkeley National Laboratory and Columbia Hill Technical Consulting. Abstract "Photolithographic patterning using extreme ultraviolet (EUV, 92.5 eV) light is a radiolytic process that initially forms electrons,... » read more

Research Bits: Sept. 16


Beyond-EUV resists Researchers from Johns Hopkins University, East China University of Science and Technology, École Polytechnique Fédérale de Lausanne (EPFL), Soochow University, Brookhaven National Laboratory, and Lawrence Berkeley National Laboratory propose a combination of new resist materials and a higher-powered EUV process that could enable smaller chip feature sizes. The "beyond... » read more

Non-ideal Subthreshold Swing In Aligned CNTs Due To Variable Occupancy Discrete Charge Traps (Berkeley Lab, Sandia)


A new technical paper titled "Non-ideal subthreshold swing in aligned carbon nanotube transistors due to variable occupancy discrete charge traps" was published by researchers at Lawrence Berkeley National Laboratory and Sandia National Laboratories. Excerpt "Carbon nanotube transistors have been experimentally demonstrated to reach performance comparable and even surpassing that of silicon... » read more

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