Taming Corner Explosion In Complex Chips


There is a tenuous balance between the number of corners a design team must consider, the cost of analysis, and the margins they insert to deal with them, but that tradeoff is becoming a lot more difficult. If too many corners of a chip are explored, it might never see production. If not enough corners are explored, it could reduce yield. And if too much margin is added, the device may not be c... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML


Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

3D NAND: Scenarios For Scaling & Stacking


A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

Where Timing And Voltage Intersect


João Geada, chief technologist at ANSYS, talks about the limitations for power delivery networks and what processors can handle, why the current solutions to these issues are causing failures, and how voltage reduction can affect timing. » read more

22nm Process Technology


Jamie Shaeffer, senior director of product line management at GlobalFoundries, talks about how FD-SOI compares with bulk technologies, where it will be used and why, and future stacking options. https://youtu.be/2i7GJRxcNRs » read more

Aging Effects


Tech Talk: Fraunhofer EAS' group manager for quality and reliability, Andre Lange, talks about how to model aging effects and why the problems are becoming more difficult at advanced nodes. https://youtu.be/XHWww2PE7aY » read more

Tech Talk: 7nm Process Variation


Ankur Gupta, director of field applications at ANSYS, discusses process variation and the problems it can cause at 10/7nm and beyond. https://youtu.be/WHNjFr1Da6s » read more

Body Bias: What It Is, And Why You Should Care


In case you hadn’t noticed, the use of integrated circuits (ICs) has exploded over the past decade. From the cheapest novelty toy to automobiles to implanted medical devices, it seems like everything we touch has an electronic component in it somewhere. Not surprisingly, that growth has brought with it a vastly expanded number and variety of IC design requirements that design companies must s... » read more

7nm Design Success Starts With Multi-Domain Multi-Physics Analysis


Companies can benefit from advancements in the latest semiconductor process technology by delivering smaller, faster and lower power products, especially for those servicing mobile, high performance computing and automotive ADAS applications. By using 7nm processes, design teams are able to add a lot more functionality onto a single chip and lower the power consumption by scaling operating volt... » read more