tag: threshold voltage

Improving The Air-Stability and NBTI Reliability of BEOL CNFETs
By Technical Paper Link - 19 Sep, 2024 - Comments: 0

A new technical paper titled "Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors" was published by researchers at MIT, Stanford University, Carnegie Mellon University and Analog Devices. Abstract: "Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among ... » read more

SRAM-Based IMC For Cryogenic CMOS Using Commercial 5 nm FinFETs
By Technical Paper Link - 27 Sep, 2023 - Comments: 0

A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology Kanpur, University of California Berkeley, and Technical University of Munich. Abstract: "Cryogenic CMOS circuits that efficiently connect the classical domain with the quantum world are the co... » read more

Non-Traditional Design of Dynamic Logic Gates and Circuits with FDSOI FETs
By Technical Paper Link - 19 May, 2023 - Comments: 1

A new technical paper titled "Non-Traditional Design of Dynamic Logics using FDSOI for Ultra-Efficient Computing" was published by researchers at University of Stuttgart, UC Berkeley, Indian Institute of Technology Kanpur, and TU Munich, with funding by the German Research Foundation. Abstract "In this paper, we propose a non-traditional design of dynamic logic circuits using Fully-Deplet... » read more

Taming Corner Explosion In Complex Chips
By Brian Bailey - 23 Feb, 2023 - Comments: 0

There is a tenuous balance between the number of corners a design team must consider, the cost of analysis, and the margins they insert to deal with them, but that tradeoff is becoming a lot more difficult. If too many corners of a chip are explored, it might never see production. If not enough corners are explored, it could reduce yield. And if too much margin is added, the device may not be c... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

3D NAND: Scenarios For Scaling & Stacking
By Technical Paper Link - 25 Aug, 2022 - Comments: 0

A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

Where Timing And Voltage Intersect
By Ed Sperling - 14 Feb, 2020 - Comments: 0

João Geada, chief technologist at ANSYS, talks about the limitations for power delivery networks and what processors can handle, why the current solutions to these issues are causing failures, and how voltage reduction can affect timing. » read more

22nm Process Technology
By Ed Sperling - 19 Jul, 2018 - Comments: 0

Jamie Shaeffer, senior director of product line management at GlobalFoundries, talks about how FD-SOI compares with bulk technologies, where it will be used and why, and future stacking options. https://youtu.be/2i7GJRxcNRs » read more

Aging Effects
By Ed Sperling - 17 Jul, 2018 - Comments: 0

Tech Talk: Fraunhofer EAS' group manager for quality and reliability, Andre Lange, talks about how to model aging effects and why the problems are becoming more difficult at advanced nodes. https://youtu.be/XHWww2PE7aY » read more

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