FinFETs Give Way To Gate-All-Around


When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

Manufacturing Bits: Jan. 14


MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more