FinFETs Give Way To Gate-All-Around

Tech brief on GAA FETs and the challenges of transistor scaling and replacing fins with nanosheets.


When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as challenges mount at the 5- and 3-nm nodes.

Lam Research Gate All Around FET

Planar, FinFET, and gate-all-around FETs. Source: Lam Research

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Author: Nerissa Draeger, Ph.D

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