tag: GAA FETs

GAA NSFETs: ML for Device and Circuit Modeling
By Technical Paper Link - 30 Nov, 2023 - Comments: 0

A new technical paper titled "A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors" was published by researchers at National Yang Ming Chiao Tung University. Abstract (excerpt) "Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domai... » read more

Week In Review: Manufacturing, Test
By Karen Heyman - 11 Aug, 2023 - Comments: 0

TSMC, Bosch, Infineon, and NXP will jointly invest in the European Semiconductor Manufacturing Co. (ESMC), in Dresden, Germany, to provide advanced semiconductor manufacturing services. ESMC marks a significant step toward construction of a 300mm fab, which is expected to have a monthly production capacity of 40,000 300mm (12-inch) wafers on TSMC’s 28/22nm planar CMOS and 16/12nm finFET proce... » read more

Navigating the Metrology Maze For GAA FETs
By Gregory Haley - 08 Aug, 2023 - Comments: 0

The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new metrology challenges. GAA represents a significant advancement in transistor architecture, where the gate material fully encompasses the nanosheet channel. This approach allows for the vertical... » read more

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 0

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Review Paper: Negative Capacitance GAA-FET
By Technical Paper Link - 20 Feb, 2023 - Comments: 0

A new technical paper titled "Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review" by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen Institute of Peking University. "The novel device structure of negative capacitance gate all around field effect transistor (NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and ... » read more

Process Innovations Enabling Next-Gen SoCs and Memories
By Laura Peters - 20 Feb, 2023 - Comments: 0

Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and potentially costly changes in architectures, materials, and core manufacturing processes. Among the options under consideration are new compute architectures, different materials, including thinner barrier layers and those with higher th... » read more

Wafer Cleaning Becomes Key Challenge In Manufacturing 3D Structures
By Adele Hars - 20 Oct, 2022 - Comments: 0

Wafer cleaning, once a rather mundane task as simple as dipping wafers in cleaning fluid, is emerging as one of the top major engineering challenges for manufacturing GAA FETs and 3D-ICs. With these new 3D structures — some on the horizon but some already in high-volume manufacturing — semiconductor wafer equipment and materials suppliers in the wet cleaning business are at the epicenter... » read more

Designing For Thermal
By Karen Heyman - 13 Sep, 2022 - Comments: 0

Heat has emerged as a major concern for semiconductors in every form factor, from digital watches to data centers, and it is becoming more of a problem at advanced nodes and in advanced packages where that heat is especially difficult to dissipate. Temperatures at the base of finFETs and GAA FETs can differ from those at the top of the transistor structures. They also can vary depending on h... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Big Changes In Architectures, Transistors, Materials
By Ed Sperling - 18 Aug, 2022 - Comments: 0

Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

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