New Transistor Structures At 3nm/2nm


Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

FinFETs Give Way To Gate-All-Around


When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

Challenges At 3/2nm


David Fried, vice president of computational products at Lam Research, talks about issues at upcoming process nodes, the move to EUV lithography and nanosheet transistors, and how process variation can affect yield and device performance. » read more

Metrology Challenges For Gate-All-Around


Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

EDA In The Cloud


Michael White, director of product marketing for Calibre physical verification at Mentor, a Siemens Business, looks at the growing compute requirements at 7, 5 and 3nm, why the cloud looks increasingly attractive from a security and capacity standpoint, and how the cloud as well as new lithography will affect the cost and complexity of developing new chips. » read more

Analog Simulation At 7/5/3nm


Hany Elhak, group director of product management at Cadence, talks with Semiconductor Engineering about analog circuit simulation at advanced nodes, why process variation is an increasing problem, the impact of parasitics and finFET stacking, and what happens when gate-all-around FETs are added into the chip. » read more

Advanced Process Control


David Fried, vice president of computational products at Lam Research, looks at shrinking tolerances at advanced processes, how that affects variation in semiconductor manufacturing, and what can be done to achieve the benefits of scaling without moving to new transistor architectures. » read more

IP Requires System Context At 6/5/3nm


Driven by each successive generation of semiconductor manufacturing technology, complexity has reached dizzying levels. Every part of the design, verification and manufacturing is more complicated and intense the more transistors are able to be packed onto a die. For these reasons, the entire system must be taken into consideration as a whole – not just as individual building blocks as could ... » read more

New Design Approaches At 7/5nm


The race to build chips with a multitude of different processing elements and memories is making it more difficult to design, verify and test these devices, particularly when AI and leading-edge manufacturing processes are involved. There are two fundamental problems. First, there are much tighter tolerances for all of the components in those designs due to proximity effects. Second, as a re... » read more

Boosting Analog Reliability


Aveek Sarkar, vice president of Synopsys’ Custom Compiler Group, talks about challenges with complex design rules, rigid design methodologies, and the gap between pre-layout and post-layout simulation at finFET nodes. https://youtu.be/JRYlYJ31LLw » read more

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