Understanding CFETs, A Next Generation Transistor Architecture


Computing power has experienced exponential growth over the last 70 years. This has largely been achieved through transistor scaling. Due to a continuous reduction in the size of transistors, engineers have been able to pack more and more of them onto a single chip [1]. This has led to faster, more powerful, and more energy-efficient devices. Improvements in fabrication processes and materials,... » read more

How To Get The Most Out Of Gate-All-Around Designs


The semiconductor industry has relied on finFETs, three-dimensional field-effect transistors with thin vertical fins, for many generations of technology. However, the industry is reaching the limits of how much finFETs can be shrunk while maintaining their speed and power benefits, which are crucial for artificial intelligence (AI) and machine learning (ML) applications. The solution is the gat... » read more

Reimagining PVT Monitoring IP For Advanced Node GAA Process


As process technology continues to evolve, so must design tools and the IP that support them. One example of an industry evolution is on the PVT monitoring IP side. The process, voltage, and temperature (PVT) monitors embedded within chips provide feedback on silicon status at every stage of the lifecycle, including mission use in the field. The data gathered from the monitors enables benefits ... » read more

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration


As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar transistor architectures toward 3D devices. Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions.... » read more

The History Of CMOS


Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. NMOS Before CMOS, there was NMOS (also PMOS, but I have no direct experience with that). An NMOS gate consisted of a network of N-transistors between the output and Vss, and a resistor (actually a transistor with an implant) between the output and... » read more

Minimizing EM/IR Impacts On IC Design Reliability And Performance


By Joel Mercier and Karen Chow As technologies and foundry process nodes continue to advance, it gets more difficult to design and verify integrated circuits (ICs). The challenges become even more apparent in 5nm and below nodes, and as the industry moves away from fin field-effect transistor (finFET) and into gate-all-around field-effect transistor (GAAFET) technologies. There are many prob... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform


New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Chipmaking In The Third Dimension


Every few months, new and improved electronics are introduced. They’re typically smaller, smarter, faster, have more bandwidth, are more power-efficient, etc. — all thanks to a new generation of advanced chips and processors. Our digital society has come to expect this steady drip of new devices as sure as the sun will rise tomorrow. Behind the scenes, however, engineers are working feve... » read more

Semiconductor Test In The Gate All Around Era


The past two years have witnessed unprecedented growth in the semiconductor industry, driven by advances in artificial intelligence, natural language processing, automated vehicles, and augmented and virtual reality. All of these applications depend heavily on advancements in semiconductors to meet their needs for enormous computational processing and communication bandwidth to makes sense of t... » read more

Precision Selective Etch And The Path To 3D


Scaling (the shrinking of the tiny devices in chips such as transistors and memory cells) has never been easy, but making the next generation of advanced logic and memory devices a reality requires creating new structures at the atomic scale. When working with dimensions this small, there is little room for variation. Compounding the problem is a need to remove material isotropically, or, un... » read more

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