A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich.
“Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal – 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.”
Find the technical paper here. Published October 2023 (preprint).
Mathieu Luisier, Cedric Klinkert, Sara Fiore, Jonathan Backman, Youseung Lee, Christian Stieger, Áron Szabó. “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective.” arXiv:2310.17724v1 (2023)
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