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A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities


Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

System Bits: Sept. 3


Microprocessor built with carbon nanotubes Researchers at the Massachusetts Institute of Technology were able to design a microprocessor with carbon nanotubes and fabricate the chip with traditional processes, an advance that could be used in next-generation computers. Work on producing carbon nanotube field-effect transistors has gone on for some time. Fabricated at scale, those CNFETs oft... » read more

Taming NBTI To Improve Device Reliability


Negative-bias temperature instability is a growing issue at the most advanced process nodes, but it also has proven extremely difficult to tame using conventional approaches. That finally may be starting to change. NBTI is an aging mechanism in field-effect transistors that leads to a change of the characteristic curves of a transistor during operation. The result can be a drift toward unint... » read more