Using The Schottky Barrier Transistor in Various Applications & Material Systems

A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)

A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Solution Processable Pentafluorophenyl EndCapped Dithienothiophene Organic Semiconductors for Hole Transporting Organic Field Effect Transistors

Abstract: "Two solution‐processable organic semiconductors, DFPT‐DTTR (1) and DFPbT‐DTTR (2), composed of pentafluorophenyl (FP) end‐capped 3,5‐dialkyl dithienothiophene (DTTR) core with thiophene (T) or bithiophene (bT) as π‐bridged spacers are developed and investigated for their optical, electrochemical, microstructural, and electrical properties. With more conjugated bithiophe... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

System Bits: Sept. 3

Microprocessor built with carbon nanotubes Researchers at the Massachusetts Institute of Technology were able to design a microprocessor with carbon nanotubes and fabricate the chip with traditional processes, an advance that could be used in next-generation computers. Work on producing carbon nanotube field-effect transistors has gone on for some time. Fabricated at scale, those CNFETs oft... » read more

Taming NBTI To Improve Device Reliability

Negative-bias temperature instability is a growing issue at the most advanced process nodes, but it also has proven extremely difficult to tame using conventional approaches. That finally may be starting to change. NBTI is an aging mechanism in field-effect transistors that leads to a change of the characteristic curves of a transistor during operation. The result can be a drift toward unint... » read more