A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien.
Abstract
"We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet...
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