tag: 3nm

5 Novel Layout Design Methodologies For The 3nm Nanosheet FET Library (Samsung, KNU)
By Technical Paper Link - 13 Aug, 2024 - Comments: 0

A new technical paper titled "Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node" was published by researchers at Samsung Electronics and Kyungpook National University (KNU). Abstract: "As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices ... » read more

Single Vs. Multi-Patterning Advancements For EUV
By Gregory Haley - 20 Jun, 2024 - Comments: 0

As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

TSMC Reports 4Q2023 Earnings: N2 Still On Track For 2025 Production
By Barry Pangrle - 25 Jan, 2024 - Comments: 0

TSMC reported their 4th quarter and end of year financial numbers for 2023. Year over year, net revenue was down 4.5% to NT$2,161.74 billion, but quarter over quarter revenue was essentially flat at NT$625.52 billion, so it appears that as 3nm is ramping up that revenue is improving. For the fourth quarter, 3nm contributed 15% of TSMC’s total wafer revenue, up from 6% in the third quarter ... » read more

What Will That Chip Cost?
By Brian Bailey - 30 Oct, 2023 - Comments: 1

In the past, analysts, consultants, and many other experts attempted to estimate the cost of a new chip implemented in the latest process technology. They concluded that by the 3nm node, only a few companies would be able to afford them — and by the time they got into the angstrom range, probably nobody would. Much has changed over the past few process nodes. Increasing numbers of startups... » read more

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 3

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Challenges Grow For CD-SEMs At 5nm And Beyond
By Gregory Haley - 11 Apr, 2023 - Comments: 1

CD-SEM, the workhorse metrology tool used by fabs for process control, is facing big challenges at 5nm and below. Traditionally, CD-SEM imaging has relied on a limited number of image frames for averaging, which is necessary both to maintain throughput speeds and to minimize sample damage from the electron beam itself. As dimensions get smaller, these limitations result in higher levels of n... » read more

Metrology Strategies For 2nm Processes
By Laura Peters - 07 Mar, 2023 - Comments: 3

Metrology and wafer inspection processes are changing to keep up with evolving and new device applications. While fab floors still have plenty of OCD tools, ellipsometers, and CD-SEMs, new systems are taking on the increasingly 3D nature of structures and the new materials they incorporate. For instance, processes like hybrid bonding, 3D NAND flash devices, and nanosheet FETs are pushing the bo... » read more

Edge AI And Chiplets
By Andy Heinig - 08 Dec, 2022 - Comments: 0

In the near future, more edge artificial intelligence (AI) solutions will find their way into our lives. This will be especially true in the private sector for applications in the field of voice input and analysis of camera data, which will become well-established. These application areas require powerful AI hardware to be able to process the corresponding continuously accumulating data volumes... » read more

What’s Different About Next-Gen Transistors
By Katherine Derbyshire - 20 Oct, 2022 - Comments: 0

After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet transistor architectures at the 3nm technology node. Relative to finFETs, nanosheet transistors deliver more drive current by increasing channel widths in the same circuit footprint. The gate-all-aroun... » read more

Scaling, Advanced Packaging, Or Both
By Ed Sperling - 01 Aug, 2022 - Comments: 0

Chipmakers are facing a growing number of challenges and tradeoffs at the leading edge, where the cost of process shrinks is already exorbitant and rising. While it's theoretically possible to scale digital logic to 10 angstroms (1nm) and below, the likelihood of a planar SoC being developed at that nodes appears increasingly unlikely. This is hardly shocking in an industry that has heard pr... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy