Recent Progress in Inorganic Metal-Oxide-Based Photoresists For EUVL


A technical paper titled "Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography" was published by researchers at University of South–Eastern Norway. Abstract: "Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent... » read more

CMOS ICs for 77 GHz Automotive Radar


A new technical paper titled "CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications" was published by researchers at STMicroelectronics and University of Catania. Abstract "This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the b... » read more

CMOS Noise Margin Values


One of the most important parameters describing digital systems operating at high speed is noise margin. In a general sense, noise margins define an acceptable level of noise that can be present on an I/O pin or in an interface. In terms of digital electronics, noise margin characterizes the level of noise that can appear on an I/O pin without creating an error in a received logic state. This i... » read more

Materials And Technologies For High Temperature, Resilient Electronics


A technical paper titled “Materials for High Temperature Digital Electronics” was published by researchers at University of Pennsylvania, Air Force Research Laboratory, and Ozark Integrated Circuits. Abstract: "Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio... » read more

Voltage Reference Architectures For Harsh Environments: Quantum Computing And Space


A technical paper titled “Cryo-CMOS Voltage References for the Ultrawide Temperature Range From 300 K Down to 4.2 K” was published by researchers at Delft University of Technology, QuTech, Kavli Institute of Nanoscience Delft, and École Polytechnique Fédérale de Lausanne (EPFL). Abstract: "This article presents a family of sub-1-V, fully-CMOS voltage references adopting MOS devices in ... » read more

Design Considerations In Photonics


Experts at the Table: Semiconductor Engineering sat down to talk about what CMOS and photonics engineers need to know to successfully collaborate, with James Pond, fellow at Ansys; Gilles Lamant, distinguished engineer at Cadence; and Mitch Heins, business development manager for photonic solutions at Synopsys. What follows are excerpts of that conversation. To view part one of this discussion,... » read more

Photonics: The Former And Future Solution


Experts at the Table: Semiconductor Engineering sat down to talk about where photonics is in the hype cycle and its secure role in data centers, with James Pond, fellow at Ansys; Gilles Lamant, distinguished engineer at Cadence; and Mitch Heins, business development manager for photonic solutions at Synopsys. What follows are excerpts of that conversation. [L-R]: Ansys’ Pond, Cadence�... » read more

Lego-Like Photonics Chip With Expanded RF Bandwidth And Advanced Filter Control


A technical paper titled “Integrated microwave photonic notch filter using a heterogeneously integrated Brillouin and active-silicon photonic circuit” was published by researchers at University of Sydney and Australian National University. Abstract: "Microwave photonics (MWP) has unlocked a new paradigm for Radio Frequency (RF) signal processing by harnessing the inherent broadband and tu... » read more

CMOS-Based HW Topology For Single-Cycle In-Memory XOR/XNOR Operations


A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). Abstract: "Big data applications are on the rise, and so is the number of data centers. The ever-increasing massive data pool needs to be periodically backed up in a secure environment. Moreover, a ... » read more

Progress In The Fabrication Of CMOS Devices Based On Stacked 2D TMD Nanoribbons (Intel)


A technical paper titled “Process integration and future outlook of 2D transistors” was published by researchers at Intel Corporation. Abstract: "The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the r... » read more

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