tag: MRAM

The Impact of Magnetic Fields On STT-MRAM Operations
By Technical Paper Link - 29 Oct, 2024 - Comments: 0

A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. Abstract "This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of... » read more

Research Bits: Sept. 24
By Jesse Allen - 24 Sep, 2024 - Comments: 0

Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

Memory Fundamentals For Engineers
By The SE Staff - 17 Sep, 2024 - Comments: 0

Memory is one of a very few elite electronic components essential to any electronic system. Modern electronics perform extraordinarily complex duties that would be impossible without memory. Your computer obviously contains memory, but so does your car, your smartphone, your doorbell camera, your entertainment system, and any other gadget benefiting from digital electronics. This eBook prov... » read more

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

SRAM Scaling Issues, And What Comes Next
By Karen Heyman - 15 Feb, 2024 - Comments: 0

The inability of SRAM to scale has challenged power and performance goals forcing the design ecosystem to come up with strategies that range from hardware innovations to re-thinking design layouts. At the same time, despite the age of its initial design and its current scaling limitations, SRAM has become the workhorse memory for AI. SRAM, and its slightly younger cousin DRAM, have always co... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more

SRAM’s Role In Emerging Memories
By Karen Heyman - 05 Jan, 2024 - Comments: 1

Experts at the Table — Part 3: Semiconductor Engineering sat down to talk about AI, the latest issues in SRAM, and the potential impact of new types of memory, with Tony Chan Carusone, CTO at Alphawave Semi; Steve Roddy, chief marketing officer at Quadric; and Jongsin Yun, memory technologist at Siemens EDA. What follows are excerpts of that conversation. Part one of this conversation can be ... » read more

MRAM Getting More Attention At Smallest Nodes
By Karen Heyman - 10 Aug, 2023 - Comments: 2

Magneto-resistive RAM (MRAM) appears to be gaining traction at the most advanced nodes, in part because of recent improvements in the memory itself and in part because new markets require solutions for which MRAM may be uniquely qualified. There are still plenty of skeptics when it comes to MRAM, and lots of potential competitors. That has limited MRAM to a niche role over the past couple de... » read more

How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips
By Technical Paper Link - 08 Jul, 2023 - Comments: 0

A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

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