tag: MRAM

Digital Memristor-Based PIM From A Device And Reliability View (Northwestern, Technion)
By Technical Paper Link - 25 Nov, 2025 - Comments: 0

A new technical paper titled "A Comparative Study of Digital Memristor-Based Processing-In-Memory from a Device and Reliability Perspective" was published by researchers at Northwestern University and  Technion – Israel Institute of Technology. Abstract "As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promis... » read more

Emerging Synaptic Memory Technologies For Neuromorphic CIM Platforms (Tampere Univ.)
By Technical Paper Link - 21 Nov, 2025 - Comments: 0

A new technical paper titled "Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware" was published by researchers at Tampere University. Abstract: "The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive... » read more

Emerging NVM: Review Of Emerging Memory Materials And Device Architectures
By Technical Paper Link - 08 Jul, 2025 - Comments: 0

A new technical paper titled "Emerging Nonvolatile Memory Technologies in the Future of Microelectronics" was published by researchers at Texas A&M University, University of Massachusetts and USC. Abstract "Memory technologies are central to modern computing systems, performing essential functions that range from primary data storage to advanced tasks, such as in-memory computing for ... » read more

A Route For More Efficient SOT-MRAM Designs (NTU, TSMC)
By Technical Paper Link - 06 May, 2025 - Comments: 0

A new technical paper titled "Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures" by researchers at National Taiwan University and TSMC. Abstract "A highly efficient spin–orbit torque (SOT) switching mechanism is crucial for the realization of practical SOT magnetic random-access memory (MRAM). This study proposes a Cr/W-based spin current sour... » read more

Design Space For The Device-Circuit Codesign Of NVM-Based CIM Accelerators (TSMC)
By Technical Paper Link - 24 Feb, 2025 - Comments: 0

A new technical paper titled "Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators" was published by TSMC researchers. Abstract "Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devices. Nonvolatile memory (NVM) devices offer one s... » read more

Advancements in SOT-MRAM Device Development (imec)
By Technical Paper Link - 28 Dec, 2024 - Comments: 0

A technical paper titled "Recent progress in spin-orbit torque magnetic random-access memory" was recently published by imec. Abstract "Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review rece... » read more

The Impact of Magnetic Fields On STT-MRAM Operations
By Technical Paper Link - 29 Oct, 2024 - Comments: 0

A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. Abstract "This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of... » read more

Research Bits: Sept. 24
By Jesse Allen - 24 Sep, 2024 - Comments: 0

Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

Memory Fundamentals For Engineers
By The SE Staff - 17 Sep, 2024 - Comments: 0

Memory is one of a very few elite electronic components essential to any electronic system. Modern electronics perform extraordinarily complex duties that would be impossible without memory. Your computer obviously contains memory, but so does your car, your smartphone, your doorbell camera, your entertainment system, and any other gadget benefiting from digital electronics. This eBook prov... » read more

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

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