tag: MRAM

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

SRAM Scaling Issues, And What Comes Next
By Karen Heyman - 15 Feb, 2024 - Comments: 0

The inability of SRAM to scale has challenged power and performance goals forcing the design ecosystem to come up with strategies that range from hardware innovations to re-thinking design layouts. At the same time, despite the age of its initial design and its current scaling limitations, SRAM has become the workhorse memory for AI. SRAM, and its slightly younger cousin DRAM, have always co... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more

SRAM’s Role In Emerging Memories
By Karen Heyman - 05 Jan, 2024 - Comments: 1

Experts at the Table — Part 3: Semiconductor Engineering sat down to talk about AI, the latest issues in SRAM, and the potential impact of new types of memory, with Tony Chan Carusone, CTO at Alphawave Semi; Steve Roddy, chief marketing officer at Quadric; and Jongsin Yun, memory technologist at Siemens EDA. What follows are excerpts of that conversation. Part one of this conversation can be ... » read more

MRAM Getting More Attention At Smallest Nodes
By Karen Heyman - 10 Aug, 2023 - Comments: 2

Magneto-resistive RAM (MRAM) appears to be gaining traction at the most advanced nodes, in part because of recent improvements in the memory itself and in part because new markets require solutions for which MRAM may be uniquely qualified. There are still plenty of skeptics when it comes to MRAM, and lots of potential competitors. That has limited MRAM to a niche role over the past couple de... » read more

How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips
By Technical Paper Link - 08 Jul, 2023 - Comments: 0

A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Journey From Cell-Aware To Device-Aware Testing Begins
By Laura Peters - 06 Jun, 2023 - Comments: 0

Early results of using device-aware testing on alternative memories show expanded test coverage, but this is just the start. Once the semiconductor industry realized that it was suffering from device failures even when test programs achieved 100% fault coverage, it went about addressing this disconnect between the way defects manifest themselves inside devices and the commonly used fault mod... » read more

Co-Design View of Cross-Bar Based Compute-In-Memory
By Technical Paper Link - 15 Mar, 2023 - Comments: 0

A new review paper titled "Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective" was published by researchers at Argonne National Lab, Purdue University, and Indian Institute of Technology Madras. "With an over-arching co-design viewpoint, this review assesses the use of cross-bar based CIM for neural networks, connecting the material proper... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology
By Nova - 18 Jan, 2023 - Comments: 0

Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

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