Study of EUV Nanostructures Using AFM With High-Aspect Ratio Tip (Purdue, Intel, Bruker)


A new technical paper, "Characterizing tip-sample interaction dynamics on extreme ultraviolet nanostructures using atomic force microscopy with a high-aspect ratio tip," was released by researchers at Purdue University, Intel Corporation and Bruker Corporation. Abstract "Accurate measurements of the nanometer scale geometry of extreme ultraviolet (EUV) lithography photoresist patterns are... » read more

The Surface Metrology Decision Guide


The Surface Metrology Decision Guide empowers readers to choose techniques and confidently engage with equipment providers. What’s inside: A side-by-side comparison of the resolution, strengths, and limitations of common surface metrology techniques An in-depth look at advances in and practical considerations for white-light interferometry (WLI) Summary chart of WLI objectives, ma... » read more

Research Bits: Jan. 27


Analog in-memory compute Researchers from Politecnico di Milano, Peking University, and Hewlett Packard Labs developed a Closed-Loop In-Memory Computing (CL-IMC) chip to reduce data movement between memory and processor. The fully integrated analog accelerator uses two 64×64 arrays of programmable SRAM cells along with integrated components including operational amplifiers and analog-to-di... » read more

Surface Metrology for Hybrid Bonding in Advanced Semiconductor Packaging


Achieving a reliable hybrid bond requires both surfaces to be pristine. To support this requirement, metrology methods such as atomic force microscopy (AFM) and atomic force profilometry (AFP) are critical for surface characterization and process optimization. AFM delivers localized, high-resolution surface measurements, while AFP provides complementary large-area topography scans that ... » read more

Thermal Scanning-Probe Lithography in vdW Heterostructures (Technical University of Denmark)


A new technical paper titled "Gradient Electronic Landscapes in van der Waals Heterostructures" was published by researchers at Technical University of Denmark. Abstract Excerpt "Here, we use thermal scanning-probe lithography to produce smooth topographic landscapes in vdW heterostructures by patterning the thickness of the top hBN flake with nanometer precision." Find the technical p... » read more

AFM-Based Protocol for Characterizing the Incipient Stages of Plasticity on Hybrid Bonding-Ready Copper Pads (NIST, Intel, Colorado School of Mines)


A new technical paper titled "Probing the Nanoscale Onset of Plasticity in Electroplated Copper for Hybrid Bonding Structures via Multimodal Atomic Force Microscopy" was published by researchers at the National Institute of Standards and Technology, Intel, and Colorado School of Mines. Excerpt  "The slowdown of Moore’s law has elicited a paradigm shift whereby shrinking of in-plane dim... » read more

Atomic Force Microscopy: The Definitive AFM Modes Handbook


This handbook illustrates the wide variety of operating modes available on Bruker AFMs, going well beyond the standard high‑resolution topographic imaging capabilities of AFM. The modes are broken into seven separate categories: morphology, electromagnetic properties, thermal properties, mechanical properties, chemical properties, electrochemical properties, and manipulation. Each category be... » read more

Metrology Advances Step Up To Sub-2nm Device Node Needs


Metrology and inspection are dealing with a slew of issues tied to 3D measurements, buried defects, and higher sensitivity as device features continue to shrink to 2nm and below. This is made even more challenging due to increasing pressure to ramp new processes more quickly. Metrology tool suppliers must exceed current needs by a process node or two to ensure solutions are ready to meet tig... » read more

Gold Substrate Plays Boosts Performance of Tellurium-Based Memristors


A new technical paper titled "Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold" was published by researchers at Politecnico di Milano, UT Austin, and STMicroelectronics. Abstract: "Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially impr... » read more

Relative Humidity in Conductive Atomic Force Microscopy (KAUST)


A new technical paper titled "The Effect of Relative Humidity in Conductive Atomic Force Microscopy" was published by researchers at KAUST. Abstract "Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field o... » read more

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