Research Bits: Mar. 25


2D materials in 3D transistors Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs. The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g... » read more

Vertical AlGaN Heterostructures For Integrated Photonics


A new technical paper titled "AlGaN/AlN heterostructures: an emerging platform for integrated photonics" was published by researchers at Humboldt-Universität zu Berlin and Ferdinand-Braun-Institut (FBH). Abstract "We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfig... » read more