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Effective Post-TSV-DRIE Wet Clean Process For Through Silicon Via Applications


Deep Reactive Ion Etch (DRIE) processes used to form through silicon vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen... » read more

Low Ripple Notch Filter Designs Using Apodized Thickness Modulation


An apodized discrete layer thickness design method for notch filters is presented. The method produces error tolerant designs with low ripple in the pass band regions without any additional numerical optimization. Sample designs are presented. Multiple approaches have been used in the past for producing notch filters (also called minus filters). The two main approaches can be grouped into ru... » read more