Week In Review: Manufacturing, Test

By Mark LaPedus - 18 Oct, 2019 - Comments: 0

Chipmakers The semiconductor capital spending race continues to escalate in the leading-edge logic space. Intel and Samsung have separately announced big capital spending plans in 2019. Intel’s latest CapEx budget is $15.5 billion in 2019, while Samsung’s CapEx is slated for $16.204 billion for the year, according to KeyBanc Capital Markets. Now, TSMC is raising the stakes. TSMC this... » read more

Next-Gen Memory Ramping Up

By Mark LaPedus - 16 Aug, 2018 - Comments: 6

The next-generation memory market is heating up as vendors ramp a number of new technologies, but there are some challenges in bringing these products into the mainstream. For years, the industry has been working on a variety of memory technologies, including carbon nanotube RAM, FRAM, MRAM, phase-change memory and ReRAM. Some are shipping, while others are in R&D. Each memory type is di... » read more

Week In Review: Manufacturing, Test

By Mark LaPedus - 10 Aug, 2018 - Comments: 0

Trade wars The Trump administration unveiled a plan to impose additional tariffs on $200 billion of Chinese goods on July 10. The announced product list included more than ten categories of LED package and lighting products, according to LEDinside, a division of TrendForce. The export value of the major lighting products in the list reached $5 billion in 2017. “So far, the impact of the U... » read more

Four Foundries Back MRAM

By Mark LaPedus - 23 Aug, 2017 - Comments: 4

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology. GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly start... » read more

MRAM Begins To Attract Attention

By Mark LaPedus - 19 Sep, 2013 - Comments: 0

By Mark LaPedus In the 1980s, there were two separate innovations that changed the landscape in a pair of related fields—nonvolatile memory and storage. In one effort, Toshiba invented the flash memory, thereby leading to NAND and NOR devices. On another front, physicists discovered the giant magnetoresistance (GMR) effect, a technology that forms the basis of hard disk drives, magnetores... » read more

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tag: Avalanche

Week In Review: Manufacturing, Test

Next-Gen Memory Ramping Up

Week In Review: Manufacturing, Test

Four Foundries Back MRAM

MRAM Begins To Attract Attention