Monolithic Vs. Heterogeneous Integration


Experts at the Table: Semiconductor Engineering sat down to discuss two very different paths forward for semiconductors and what's needed for each, with Jamie Schaeffer, vice president of product management at GlobalFoundries; Dechao Guo, director of advanced logic technology R&D at IBM; Dave Thompson, vice president at Intel; Mustafa Badaroglu, principal engineer at Qualcomm; and Thomas Po... » read more

Metrology Advances Step Up To Sub-2nm Device Node Needs


Metrology and inspection are dealing with a slew of issues tied to 3D measurements, buried defects, and higher sensitivity as device features continue to shrink to 2nm and below. This is made even more challenging due to increasing pressure to ramp new processes more quickly. Metrology tool suppliers must exceed current needs by a process node or two to ensure solutions are ready to meet tig... » read more

Metrology And Inspection For The Chiplet Era


New developments and innovations in metrology and inspection will enable chipmakers to identify and address defects faster and with greater accuracy than ever before, all of which will be required at future process nodes and in densely packed assemblies of chiplets. These advances will affect both front-end and back-end processes, providing increased precision and efficiency, combined with a... » read more

Intel Vs. Samsung Vs. TSMC


The three leading-edge foundries — Intel, Samsung, and TSMC — have started filling in some key pieces in their roadmaps, adding aggressive delivery dates for future generations of chip technology and setting the stage for significant improvements in performance with faster delivery time for custom designs. Unlike in the past, when a single industry roadmap dictated how to get to the next... » read more

3D Metrology Meets Its Match In 3D Chips And Packages


The pace of innovation in 3D device structures and packages is accelerating rapidly, driving the need for precise measurement and control of feature height to ensure these devices are reliable and perform as expected throughout their lifetimes. Expansion along the z axis is already well underway. One need look no further than the staircase-like 3D NAND stacks that rise like skyscrapers to p... » read more

Powering CFETs From The Backside


The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs) that vertically integrate stacked NFET and PFET devices. With at least twice the thickness of a nanosheet transistor, connecting CFETs to each other and to the rest of the circuit is likely to... » read more

The Rising Price Of Power In Chips


Power is everything when it comes to processing and storing data, and much of it isn't good. Power-related issues, particularly heat, dominate chip and system designs today, and those issues are widening and multiplying. Transistor density has reached a point where these tiny digital switches are generating more heat than can be removed through traditional means. That may sound manageable e... » read more

DTCO/STCO Create Path For Faster Yield Ramps


Higher density in planar SoCs and advanced packages, coupled with more complex interactions and dependencies between various components, are permitting systematic defects to escape traditional detection methods. These issues increasingly are not detected until the chips reach high-volume manufacturing, slowing the yield ramp and bumping up costs. To combat these problems, IDMs and systems co... » read more

3D In-Memory Compute Making Progress


Indium compounds are showing great promise for 3D in-memory compute and RF integration, but more work is needed. Researchers continue to make headway into 3D device integration particularly with indium tin oxide (ITO), which is widely used in display manufacturing. Recent work indicates that different compounds of indium oxide doped with tin, gallium, or zinc combinations may boost transisto... » read more

Will CFETs Help The Industry Go Vertical?


Device scaling is getting much harder at each new process node. Even defining what it means is becoming a challenge. In the past, gate length and metal pitch went down and device density went up. Today, this is much harder for several reasons: • Short channel effects limit gate-length scaling; • Parasitic effects limit device density, and • Metal resistance limits metal pitch. So r... » read more

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