tag: CFETs

3D Stacked Device Architecture Enabled By BEOL-Compatible Transistors (Stanford et al.)
By Technical Paper Link - 26 Feb, 2025 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3-D Logic With Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation and Carnegie Mellon University. Abstract "This article presents Omni 3D—a 3-D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D interleaves metal lay... » read more

Interconnects Approach Tipping Point
By Laura Peters - 20 Feb, 2025 - Comments: 0

As leading devices move to next generation nanosheets for logic, their interconnections are getting squeezed past the point where they can deliver low resistance pathways. The 1nm (10Å) node will have 20nm pitch and larger metal lines, but the interconnect stack already consumes a third of device power and accounts for 75% of the chip's RC delay. Changing this dynamic requires a superior co... » read more

Material Properties of Si/SiGe Multi-layer Stacks For CFETs (Imec, Ghent U, et al.)
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A new technical paper titled "Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices" was published by researchers at Imec and Ghent University, et al. Abstract "After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material pr... » read more

Monolithic Vs. Heterogeneous Integration
By Ed Sperling - 24 Oct, 2024 - Comments: 0

Experts at the Table: Semiconductor Engineering sat down to discuss two very different paths forward for semiconductors and what's needed for each, with Jamie Schaeffer, vice president of product management at GlobalFoundries; Dechao Guo, director of advanced logic technology R&D at IBM; Dave Thompson, vice president at Intel; Mustafa Badaroglu, principal engineer at Qualcomm; and Thomas Po... » read more

Metrology Advances Step Up To Sub-2nm Device Node Needs
By Laura Peters - 15 Oct, 2024 - Comments: 0

Metrology and inspection are dealing with a slew of issues tied to 3D measurements, buried defects, and higher sensitivity as device features continue to shrink to 2nm and below. This is made even more challenging due to increasing pressure to ramp new processes more quickly. Metrology tool suppliers must exceed current needs by a process node or two to ensure solutions are ready to meet tig... » read more

Metrology And Inspection For The Chiplet Era
By Gregory Haley - 06 Aug, 2024 - Comments: 0

New developments and innovations in metrology and inspection will enable chipmakers to identify and address defects faster and with greater accuracy than ever before, all of which will be required at future process nodes and in densely packed assemblies of chiplets. These advances will affect both front-end and back-end processes, providing increased precision and efficiency, combined with a... » read more

Intel Vs. Samsung Vs. TSMC
By Ed Sperling - 15 Jul, 2024 - Comments: 3

The three leading-edge foundries — Intel, Samsung, and TSMC — have started filling in some key pieces in their roadmaps, adding aggressive delivery dates for future generations of chip technology and setting the stage for significant improvements in performance with faster delivery time for custom designs. Unlike in the past, when a single industry roadmap dictated how to get to the next... » read more

3D Metrology Meets Its Match In 3D Chips And Packages
By Laura Peters - 11 Jun, 2024 - Comments: 0

The pace of innovation in 3D device structures and packages is accelerating rapidly, driving the need for precise measurement and control of feature height to ensure these devices are reliable and perform as expected throughout their lifetimes. Expansion along the z axis is already well underway. One need look no further than the staircase-like 3D NAND stacks that rise like skyscrapers to p... » read more

Powering CFETs From The Backside
By Katherine Derbyshire - 21 Mar, 2024 - Comments: 0

The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs) that vertically integrate stacked NFET and PFET devices. With at least twice the thickness of a nanosheet transistor, connecting CFETs to each other and to the rest of the circuit is likely to... » read more

The Rising Price Of Power In Chips
By Ed Sperling - 14 Mar, 2024 - Comments: 0

Power is everything when it comes to processing and storing data, and much of it isn't good. Power-related issues, particularly heat, dominate chip and system designs today, and those issues are widening and multiplying. Transistor density has reached a point where these tiny digital switches are generating more heat than can be removed through traditional means. That may sound manageable e... » read more

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