ESD Co-Design For High-Speed SerDeS In FinFET Technologies


An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

Assessing ESD Sensitivity Of Interface IP Using Charged Device Model


An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, especially from the completion of the silicon wafer processing to when the device is assembled in the system. The most commonly used ESD test models are the Human Body Model (HBM) and the Charged Device Model (CDM). Both models assess the ESD sensitivity of a device, however due to the rapi... » read more