tag: CMOS

A Comprehensive Study Of Integrating 2D Materials With CFET Architecture (SKKU, et al.)
By Technical Paper Link - 12 May, 2026 - Comments: 0

A new technical paper, "Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors," was published by researchers at Sungkyunkwan University, Hanyang University, Istituto Italiano di Tecnologia, Shanghai University, Jeonbuk National University, and Kyonggi University. Abstract "With planar complementary metal-oxide-semiconductor (CMOS) scaling ... » read more

HW-Based Image Generation Using FTJs (SNU, Sungkyunkwan U., SK hynix et al.)
By Technical Paper Link - 12 May, 2026 - Comments: 0

A new technical paper, "CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation," was published by researchers at Seoul National University, Sungkyunkwan University, Hanyang University, Sogang University, and SK Hynix. Abstract "Recent progress in generative modeling has intensified the need for compact, energy-efficien... » read more

Simulations of Silicon Spin Qubits Based on a GAAFET (Teikyo U., Riken)
By Technical Paper Link - 30 Mar, 2026 - Comments: 0

A new technical paper, "Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor," was published by Teikyo University and RIKEN. Abstract "We theoretically investigated the readout process of a spin–qubit structure based on a gate-all-around (GAA) transistor. Our study focuses on a logical qubit composed of two physical qubits. Different spin configuration... » read more

Nanoscale MoS₂-based Memristors Integrated into CMOS Microchips
By Technical Paper Link - 20 Feb, 2026 - Comments: 0

A new technical paper, "Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips" was published by RWTH Aachen and Forschungszentrum Jülich GmbH. Abstract "2D materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoS2) ha... » read more

Picosecond Ultrasonics: An Advanced Technology Utilized for Process Control of SiCr Thin Film Resistors
By Onto Innovation - 10 Feb, 2026 - Comments: 0

The bipolar-CMOS-DMOS (BCD) process is an advanced semiconductor technology integrating bipolar, CMOS, and DMOS devices onto a single chip, providing a compact, high-performance platform for the integration of analog, digital, and power circuitry. Thin-film resistors are employed to ensure precise resistance values and minimal temperature coefficients (TCR), thereby delivering enhanced accuracy... » read more

Overview of Interface Dipole Engineering: Formation Mechanisms, Control Methods, And Emerging Applications (SNU, Sejong U.)
By Technical Paper Link - 06 Feb, 2026 - Comments: 0

Researchers at Seoul National University and Sejong University published "Interface dipole modulation for gate dielectrics in Field-Effect transistors: a review." Abstract "Interface dipole engineering has recently become a key technology in the fabrication of semiconductor FETs. This review comprehensively covers the principles, methods, and applications of interface dipoles in gate diel... » read more

Photonics as a Carbon-Sustainable Solution for Next-Gen AI Hardware (Boston Univ., NY CREATES, Lightmatter, Cornell Tech)
By Technical Paper Link - 21 Oct, 2025 - Comments: 0

A new technical paper titled "Photonics for sustainable AI" was published by researchers at Boston University, NY CREATES, Lightmatter and Cornell Tech. Abstract "The rising computational demands of Artificial Intelligence (AI) are driving a rapid surge in carbon emissions from the Information and Communications Technology (ICT) sector. Traditional CMOS-based computing is reaching its scali... » read more

Recent Progress in Inorganic Metal-Oxide-Based Photoresists For EUVL
By Technical Paper Link - 29 Oct, 2024 - Comments: 0

A technical paper titled "Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography" was published by researchers at University of South–Eastern Norway. Abstract: "Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent... » read more

CMOS ICs for 77 GHz Automotive Radar
By Technical Paper Link - 28 May, 2024 - Comments: 0

A new technical paper titled "CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications" was published by researchers at STMicroelectronics and University of Catania. Abstract "This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the b... » read more

CMOS Noise Margin Values
By Cadence - 08 May, 2024 - Comments: 0

One of the most important parameters describing digital systems operating at high speed is noise margin. In a general sense, noise margins define an acceptable level of noise that can be present on an I/O pin or in an interface. In terms of digital electronics, noise margin characterizes the level of noise that can appear on an I/O pin without creating an error in a received logic state. This i... » read more

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