Research Bits: Feb. 10


Speeding up 3D NAND etch Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND by using a combined hydrogen fluoride gas to create the plasma. “Cryo etch with the hydrogen fluoride plasma showed a significant increase in the etching rate compared... » read more