Photonic Packaging Resistant to Extreme Environments (NIST, Johns Hopkins, U. Of Maryland)


A new technical paper, "Photonic chip packaging for extreme environments" was published by NIST, Johns Hopkins and University of Maryland. Abstract "Integrated photonic sensors have advanced significantly in the past decade for an ever-increasing range of applications, driven by the inherent scalability of integrated photonics combined with the precision of nanofabrication. Robust and rug... » read more

Emergence Of The JJFET For Cryogenic and Quantum-Compatible Logic (Univ. of Glasgow)


A new technical paper titled "Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies" was published by researchers at University of Glasgow. Abstract "The continuous miniaturisation of metal-oxide-semiconductor field-effect transistors (MOSFETs) from long- to short-channel architectures has advanced beyond the predictions of Moore's Law. ... » read more

Double Intra-Cavity VCSELs: Properties And Design Challenges At Cryogenic Temperatures (Tampere Univ.)


A new technical paper titled "Thermal characteristics of a double intra-cavity contact VCSEL for cryogenic optical links" was published by researchers at Tampere University. Excerpt "Cryogenic computing systems, including quantum computers, cryo-CMOS and superconducting processors, necessitate efficient optical data links capable of operation at temperatures as low as 4 K. Vertical-cavity s... » read more

Impact Of Cryogenic Temps On The Minimum-Operating Voltage Of 5nm FinFETs-Based SRAM (IIT, UC Berkeley et al)


A new technical paper titled "An Investigation of Minimum Supply Voltage of 5nm SRAM from 300K down to 10K" was published by researchers at Indian Institute of Technology, UC Berkeley and Munich Institute of Robotics and Machine Intelligence. Abstract "In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum-operating voltage (Vmin) of 5 nm ... » read more

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures


A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more

Forward Body Biasing in Bulk Cryo-CMOS With Negligible Leakage (TU Delft)


A new technical paper titled "Cryogenic-Aware Forward Body Biasing in Bulk CMOS" was published by researchers at QuTech, Tu Delft. Abstract "Cryogenic CMOS (cryo-CMOS) circuits are often hindered by the cryogenic threshold-voltage increase. To mitigate such an increase, a forward body biasing (FBB) technique in bulk CMOS is proposed, which can operate up to the nominal supply without prob... » read more

Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes


A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft


A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. Abstract: "Cryogenic propulsion with hydrogen fuel cells replacing fossil fuels is a promising solution to cut carbon emissions in the aviation sector. Hydrogen will also be used for cooling the superconducting mac... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si


A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Characteristics of Three-Gated Reconfigurable FETs


A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

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