Forward Body Biasing in Bulk Cryo-CMOS With Negligible Leakage (TU Delft)


A new technical paper titled "Cryogenic-Aware Forward Body Biasing in Bulk CMOS" was published by researchers at QuTech, Tu Delft. Abstract "Cryogenic CMOS (cryo-CMOS) circuits are often hindered by the cryogenic threshold-voltage increase. To mitigate such an increase, a forward body biasing (FBB) technique in bulk CMOS is proposed, which can operate up to the nominal supply without prob... » read more

Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes


A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft


A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. Abstract: "Cryogenic propulsion with hydrogen fuel cells replacing fossil fuels is a promising solution to cut carbon emissions in the aviation sector. Hydrogen will also be used for cooling the superconducting mac... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si


A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Characteristics of Three-Gated Reconfigurable FETs


A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

Probe Expertise For Cryogenic Devices


The promise of quantum computing to solve complex problems far beyond today’s supercomputer capabilities, plus the emergence of high performance image sensors for security, military, and health care use, and other emerging applications are driving the need for test and measurement tools that can operate in extreme low temperatures (below about -150°C down to a few degrees above absolute zero... » read more

Heating Up Cryogenic Wafer Testing


The use of on-wafer superconducting materials, other novel materials, and traditional semiconductors at cryogenic temperatures (below about 123K, or -150°C) has grown quickly in recent years. Inventive new sensors take advantage of unique material properties at very low temperatures to detect a wide variety of physical phenomena such as infrared radiation, magnetic fields, x-rays, and more. T... » read more

Power/Performance Bits: Feb. 18


Cryogenic memory Researchers at Oak Ridge National Laboratory demonstrated a new cryogenic memory cell circuit design based on coupled arrays of Josephson junctions. Such a memory could help enable exascale and quantum computing. The cells are designed to operate in super cold temperatures and were tested at just 4 Kelvin above absolute zero, about minus 452 degrees Fahrenheit. At these col... » read more