A Memory Device With MoS2 Channel For High-Density 3D NAND Flash-Based In-Memory Computing


A technical paper titled “Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing" was published by researchers at Kyungpook National University, Sungkyunkwan University, Dankook University, and Kwangwoon University. Abstract: "With the rise of on-device artificial intelligence (AI) technology, the demand for in-memory computing has surged for data-intensiv... » read more