A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich.
Abstract:
"Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity...
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