tag: dry etch

What’s Different About Next-Gen Transistors
By Katherine Derbyshire - 20 Oct, 2022 - Comments: 0

After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet transistor architectures at the 3nm technology node. Relative to finFETs, nanosheet transistors deliver more drive current by increasing channel widths in the same circuit footprint. The gate-all-aroun... » read more

Highly Selective Etch Rolls Out For Next-Gen Chips
By Mark LaPedus - 21 Mar, 2022 - Comments: 0

Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective etch system, sometimes called highly-selective etch, in 2016. Now, Lam Research, TEL, and others are shipping tools with highly-selective etch capabilities, in preparation for futuristic devices su... » read more

Chillers: A Cooling Product But Temperatures Still Rising
By John West - 16 Dec, 2021 - Comments: 0

In what has been an incredible ride over the past five years for everyone in the semiconductor supply chain, suppliers of chillers have shined as standout performers. These cooling systems that are stuck in the sub-fab space under the clean rooms get little attention, yet revenues have more than doubled in the past five years, clocking a compound annual growth rate of 22% to reach $635 million ... » read more

Expanded Material Metrology For Refined Etch Selectivities
By Anoop Somanchi - 08 Jun, 2021 - Comments: 0

Trends in advanced device fabrication require combined lithography-etching multi-patterning sequences and self-aligned multi-patterning to form devices’ finest features at subwavelength dimensions. As EUV lithography (13.5 nm) progresses to larger numerical apertures and new thin resists, new multipatterning sequences must be developed with mutually compatible resists and proximal layers t... » read more

Accelerating Dry Etch Processes During Feature Dependent Etch
By Timothy Yang - 23 Nov, 2020 - Comments: 0

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results, since the etch rate at any point on the wafer will vary depending on the solid angle visible to the bulk chamber and the ion flux for that angular range. These non-uniform and feature dependent e... » read more

5/3nm Wars Begin
By Mark LaPedus - 23 Jan, 2020 - Comments: 6

Several foundries are ramping up their new 5nm processes in the market, but now customers must decide whether to design their next chips around the current transistor type or move to a different one at 3nm and beyond. The decision involves the move to extend today’s finFETs to 3nm, or to implement a new technology called gate-all-around FETs (GAA FETs) at 3nm or 2nm. An evolutionary step f... » read more

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